Asynchronous Successive Approximation Register Research Articles

A 10-bit 160 MS/s Asynchronous SAR ADC design

This study describes a 10-bit 160 MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) design in a 40 nm CMOS technical process. The SAR ADC is provided with an improved capacitive digital-to-analog converter (CDAC), and the capacitor array is featured by six split high-bit capacitors and a combination of splitting and monotonic switching schemes. This structure and switching scheme can both save power and improve speed while introducing negligible common-mode voltage change. An improved double-tail comparator and TSPC D flip-flops are implemented to further enhance the speed. Simulation results show that the ADC achieves SFDR 72.17 dB, SNDR 61.37 dB, and ENOB 9.90 bits at Nyquist input frequency. The power consumption of the ADC under a 1.2 V power supply is 2.808 mW, achieving 18.4 fJ/conv FoM.

An 8 bit-ENOB Sampling-rate Reconfigurable Asynchronous SAR ADC with Metastability Watchdog Circuit for Activity-driven Multi-Channel CMOS Readout ASICs for Space Applications

This article presents an innovative architecture and design of an 8-bits Effective-Number-of-Bits (ENOB) Asynchronous Successive-Approximation-Register (ASAR) Analog-to-Digital-Converter (ADC), aiming at activity-driven multi-channel Complementary-Metal-Oxide-Semiconductor (CMOS) readout Application-Specific-Integrated-Circuits (ASICs) for imaging and spectroscopic applications in space field. The proposed ADC needs only a single low duty-cycle clock signal ‘CLKSampling’ to initiate the conversion process and generates all other required clock signals internally. Unlike conventional ASAR ADCs, this ADC makes use of a unique rising edge only variable delay-cell to introduce desired delay values to the internally generated clock signal. In addition, the ADC features sampling-rate (fs)-reconfigurability, from typical 40 kHz to 167 kHz, with a proportional power consumption. Also, the proposed architecture is flexible with respect to the time-period and duty-cycle of the ‘CLKSampling’ signal, that can be tailored keeping in view the primary requirements of the desired applications. Moreover, the proposed design is equipped with a simple metastability watchdog circuitry. Fabricated in a 0.35 µm CMOS process at 3.3 V supply, the ADC secures a measured ENOB, and Signal-to-Noise-and-Distortion-Ratio (SNDR) of 7.76-bits, and 48.47 dB, respectively at the typical fs of 40 kHz. Measured Integral-Non-Linearity (INL), and Differential-Non-Linearity (DNL) are within one LSB. The ADC normalized figure-of-merit (FoMWN) - proposed to fairly compare high voltage-based ADCs with low voltage-based ADCs - is 476 fJ/C-step at its maximum fs with all the sections of the ADC operating at 3.3 V. The FoMWN improves to 261.7 fJ/c-step and 243 fJ/c-step with the digital section and delay-cell operated at 1.2 V with and without level-shifters power contribution, respectively without any performance deterioration.

An Analog Side-Channel Attack on a High-Speed Asynchronous SAR ADC Using Dual Neural Network Technique

This brief presents a side-channel attack (SCA) technique on a high-speed asynchronous successive approximation register (SAR) analog-to-digital converter (ADC). The proposed dual neural network based on multiple noise waveforms separately discloses sign and absolute value information of input signals which are hidden by the differential structure and high-speed asynchronous operation. The target SAR ADC and on-chip noise monitors are designed on a single prototype chip for SCA demonstration. Fabricated in 40 nm, the experimental results show the proposed attack on the asynchronous SAR ADC successfully restores the input data with a competitive accuracy within 300mV rms error.

Memristor-Assisted Background Calibration for SAR ADCs: A Feasibility Study

This paper proposes a memristor-assisted sign-based background calibration scheme for analog-to-digital converters (ADCs). The scheme was implemented and validated in a 12-bit asynchronous successive approximation register (SAR) ADC, which consists of a hybrid binary weighted/R-2R digital-to-analog converter (binary/R-2R DAC) and other peripheral circuits. This hybrid DAC, in which one redundancy bit is introduced, is built with a memristor and standard polysilicon resistors. The proposed calibration technique can detect the errors caused by DAC mismatches and correct them by adjusting the resistance of the memristor (memristance) in a feedback loop. The implemented circuit takes the memristor’s advantages such as small area and resistance switching property. The proposed scheme has been designed and simulated in a standard 180 nm CMOS process. Eventually, a monolithic CMOS/memristor chip will be fabricated with the CMOS part processed at a standard foundry and the memristors integrated through post-CMOS processing in house. Simulation results demonstrate the feasibility of exploiting memristors to improve the linearity of high-resolution SAR ADCs. The designed calibration scheme can effectively reduce the integral non-linearity (INL) and differential non-linearity (DNL) of the 12-bit SAR ADC.

A Three-Step Tapered Bit Period SAR ADC Using Area-Efficient Clock Generation

A three-step tapered bit period asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) is proposed to reduce the total DAC settling time by 47.7% compared to the non-tapered conversion time with less design overhead. Unlike conventional approaches, the SAR settling time analysis with both reference buffer output impedance and hardware overhead is first analyzed in each conversion step, which demonstrates that the three-step tapered bit period approach is the most time- and hardware efficient in our design. Additionally, area-efficient three-step clock generation is proposed by sharing resistors for delay generation, resulting in a small area increase of only 20.4% compared to the non-tapered clock generation. As a result, the proposed technique is used to reduce the reference buffer’s power and increase the sampling frequency. The maximum allowed output impedance of the reference buffer for SFDR > 92 dB becomes larger than that of the non-tapered design by 200 Ω, translated to a sampling frequency increase from 6 MHz to 8 MHz in our design. The proposed three-step tapered bit period using an area-efficient clock generator was designed in a 55 nm CMOS process. The clock generator occupies 0.00081 mm2 out of 1143 μm × 81 μm overall size. The power consumption of the 8 MS/s 12-bit SAR ADC with proposed clock generation is 128.91 μW when under 1 V supply.

A 0.9-V DAC-Calibration-Free Continuous-Time Incremental Delta–Sigma Modulator Achieving 97-dB SFDR at 2 MS/s in 28-nm CMOS

This article shows the design of a wideband 3-0 sturdy-multi-stage noise-shaping (SMASH) continuous-time (CT) incremental delta–sigma (I- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\boldsymbol {\Delta \Sigma }$ </tex-math></inline-formula> ) analog-to-digital converter (ADC). The two stages’ quantizers (QTZs) are implemented by a single re-configurable multibit (MB) asynchronous (A)SAR ADC. The digital-to-analog converter (DAC) nonlinearities are suppressed by reconfiguring the asynchronous successive-approximation register (ASAR) ADC from 2 to 5 b, and correspondingly, the DACs dynamically switch from 1.5- to 4-b tri-level outputs within each Nyquist conversion cycle. This results in a DAC-calibration-free MB operation. A two-tap FIR filter is implemented in the feedback DACs to reduce jitter requirements in the initial 1.5-b cycles. Through the design representation, a detailed fundamental comparison between an X-0 SMASH architecture and an X-order single-loop modulator is discussed. This discussion highlights the introduction of an efficient tri-level combination between the MSB and the LSBs of the ASAR QTZ. The resulting SMASH CT I- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\boldsymbol {\Delta \Sigma }$ </tex-math></inline-formula> modulator was fabricated in 28-nm CMOS technology with an active area of 0.125 mm2. It achieves 97-dB spurious-free dynamic range (SFDR) without calibration, 89-dB dynamic range (DR), and 81.2-dB SNDR in a 1-MHz bandwidth (BW). It consumes 3.6 mW from a single 0.9-V supply. The design shows very good robustness across different tested samples, supply variations, and across temperatures from −20 °C to 80 °C.

A 10-Bit 400-KS/s Low Noise Asynchronous SAR ADC with Dual-Domain Comparator for Input-Referred Noise Reduction.

This paper presents a low noise 0.6-V 400-kS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) for input-referred noise reduction. A dual-domain comparator is proposed to optimize the power, noise, and sampling rate of the ADC in the 10-bit conversion. In order to optimize the figure of merits (FoM) of the ADC, the 10-bit conversion consists of a 7-bit coarse conversion with the double-tail dynamic comparator and a 3-bit fine conversion with the VCDL-based time-domain comparator. An asynchronous timing controller is also proposed to improve the ADC sampling rate and optimize the power consumption of the dual-domain comparator. The proposed SAR ADC is fabricated in 180-nm CMOS technology with an area of 0.836 mm2. At a 0.6-V supply voltage and a 400-kS/s sampling rate, the implemented SAR ADC achieves a signal-to-noise and distortion ratio (SNDR) of 56.59 dB and an effective number of bits (ENOB) of 9.16 bits. The peak values of DNL and INL are +0.47/−0.53 LSB and +0.92/−0.64 LSB, respectively. The FoM is 10.31 fJ/conversion step with a power consumption of 2.36 μW.

A Design of 10-Bit Asynchronous SAR ADC with an On-Chip Bandgap Reference Voltage Generator.

A proposed prototype of a 10-bit 1 MS/s single-ended asynchronous Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) with an on-chip bandgap reference voltage generator is fabricated with 130 nm technology. To optimize the power consumption, static, and dynamic performance, several techniques have been proposed. A dual-path bootstrap switch was proposed to increase the linearity sampling. The Voltage Common Mode (VCM)-based Capacitive Digital-to-Analog Converter (CDAC) switching technique was implemented for the CDAC part to alleviate the switching energy problem of the capacitive DAC. The proposed architecture of the two-stage dynamic latch comparator provides high speed and low power consumption. Moreover, to achieve faster bit conversion with an efficient time sequence, asynchronous SAR logic with an internally generated clock is implemented, which avoids the requirement of a high-frequency external clock, as all conversions are carried out in a single clock cycle. The proposed error amplifier-based bandgap reference voltage generator provides a stable reference voltage to the ADC for practical implementation. The measurement results of the proposed SAR ADC, including an on-chip bandgap reference voltage generator, show an Effective Number of Bits (ENOB) of 9.49 bits and Signal-to-Noise and Distortion Ratio (SNDR) of 58.88 dB with 1.2 V of power supply while operating with a sampling rate of 1 MS/s.

A 0.0067-mm2 12-bit 20-MS/s SAR ADC Using Digital Place-and-Route Tools in 40-nm CMOS

A 12-bit 20-MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) is presented by using the digital place-and-route (DPR) tools. The macrocells for the capacitive digital-to-analog converter, the bootstrapped switch, and the dynamic comparator are presented. The custom standard cells for the dynamic SAR logic are also presented. By using the macrocells and the custom standard ones, the layout of this SAR ADC is completed by using the DPR tools. Several techniques are presented to improve the parasitic capacitances, the current density of the metal interconnections, and the nonideal effects caused by the DPR tools. This SAR ADC is fabricated in 40-nm CMOS technology and its active area is 0.0067 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . To compare with the full-custom method, the proposed DPR flow has speeded up by a factor of 288 to complete the interconnection wires. Its power dissipation is 363 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{W}$ </tex-math></inline-formula> at 20 MS/s and the calculated Walden FoM is 23 fJ/c. step at Nyquist frequency.

A 0.0012 mm2 6-bit 700 MS/s 1 mW Calibration-Free Pseudo-Loop-Unrolled SAR ADC in 28 nm CMOS

This paper presents a high-speed successive approximation register (SAR) analog-to-digital converter (ADC) that takes advantage of both asynchronous SAR ADC and loop-unrolled (LU) SAR ADC. By utilizing the output of the dynamic amplifier (DA) to generate an asynchronous clock, the reset time for the DA can be hidden behind the comparator latching time. Dedicated latches for each digital-to-analog converter (DAC) element eliminate the need for DAC switching logic. The proposed inverter-inserted three-stage comparator significantly reduces the input-referred offset of the comparator. The prototype 6-bit 700 MS/s SAR ADC was implemented in a 28 nm CMOS process and has a small 0.0012 mm2 area. The measured peak DNL and INL without any mismatch calibration were 0.33 and 0.27 LSB, respectively. With Nyquist input, the measured signal-to-noise and distortion ratio (SNDR) and spurious-free dynamic range (SFDR) were 34.07 and 47.52 dB, respectively. The power consumption was 1 mW under a supply voltage of 1.0 V, leading to a Walden figure of merit (FoM) of 34.6 fJ/conversion-step at 700 MS/s.

A 12-Bit 20-kS/s 640-nW SAR ADC With a VCDL-Based Open-Loop Time-Domain Comparator

This brief presents a 12-bit ultra-low-power asynchronous successive approximation register (SAR) analog-to-digital converter (ADC). A voltage-controlled delay line (VCDL) based open-loop time-domain comparator is proposed and analyzed, achieving low noise and ultra-low power performance. By employing the mixed switching scheme, the segmented capacitive digital-to-analog converter (CDAC) arrays as well as the synchronous data-weighted averaging (DWA) calibration block, the proposed SAR ADC can operate from 1.8 V down to 0.8 V at 20&#x2013;200 kS/s. The designed ADC is fabricated in a 0.18- <inline-formula> <tex-math notation="LaTeX">$\mu {\mathrm{ m}}$ </tex-math></inline-formula> CMOS process and the measurement results show the proposed SAR ADC achieves an SNDR of 65-dB with power consumption of 647 nW from a 0.8 V power supply at 20 kS/s.

A 0.32 nW–1.07 µW All-Dynamic Versatile Resistive Sensor Interface With System-Level Ratiometric Measurement

An ultra-low power, energy efficient, and versatile resistive sensor interface for energy constrained internet-of-things applications is presented. The sensor interface includes an efficiently duty-cycled current digital-to-analog converter (I-DAC) and an asynchronous successive approximation register (SAR) analog-to-digital converter (ADC), which enables a fully-dynamic operation. A fast start-up circuit is used in the duty-cycled I-DAC to speed up the start-up procedure and to minimize the energy consumption. A system-level correlated double sampling (CDS) technique is employed to suppress ADC offset and 1/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$f$ </tex-math></inline-formula> noise. To tackle the limited robustness against supply and temperature variations observed in a previous implementation of the sensor interface, a system-level ratiometric measurement (SRM) approach is employed in an updated design, which is described here in detail. The chip is fabricated in 65nm CMOS technology. Thanks to the all-dynamic nature, measurement rates from 0.1S/s to 12.5kS/s can be supported with an inherent scaling of power over 3 orders of magnitude. A reported lowest power consumption of 0.32nW is achieved at 0.1S/s. Adaptable resolution with efficient scaling of power can also be achieved by adjusting sensor interface settings and/or using oversampling and averaging. The achieved figure-of-merit (FoM), which ranges from 98 to 552fJ/conv-step is also the lowest among prior designs. Thanks to the SRM approach, only 3.6%/V and 21ppm/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^\circ \text{C}$ </tex-math></inline-formula> supply and temperature sensitivity are obtained, respectively.

A 28 nm CMOS 10 bit 100 MS/s Asynchronous SAR ADC with Low-Power Switching Procedure and Timing-Protection Scheme

This paper presents a 10 bit 100 MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) without calibration for industrial control system (ICS) applications. Several techniques are adopted in the proposed switching procedure to achieve better linearity, power and area efficiency. A single-side-fixed technique is utilized to reduce the number of capacitors; a parallel split capacitor array in combination with a partially thermometer coded technique can minimize the switching energy, improve speed, and decrease differential non-linearity (DNL). In addition, a compact timing-protection scheme is proposed to ensure the stability of the asynchronous SAR ADC. The proposed ADC is fabricated in a 28 nm CMOS process with an active area of 0.026 mm2. At 100 MS/s, the ADC achieves a signal-to-noise-and-distortion ratio (SNDR) of 51.54 dB and a spurious free dynamic range (SFDR) of 55.12 dB with the Nyquist input. The measured DNL and integral non-linearity (INL) without calibration are +0.37/−0.44 and +0.48/−0.63 LSB, respectively. The power consumption is 1.1 mW with a supply voltage of 0.9 V, leading to a figure of merit (FoM) of 35.6 fJ/conversion-step.

A 38.6-fJ/Conv.-Step Inverter-Based Continuous-Time Bandpass ΔΣ ADC in 28 nm Using Asynchronous SAR Quantizer

We propose a self-biased inverter-based amplifier for realizing a high-speed low-power second-order single-loop continuous-time bandpass delta-sigma modulator (CT-BP- ΔΣM). The design is amenable to nanoscale CMOS and exploits a single self-biased pseudo-differential inverter with a positive feedback to replace conventional op-amps used in an integrator configuration. The modulator also uses a 5-bit asynchronous successive approximation register (ASAR) quantizer. With a 30 MHz bandwidth at 400 MS/s sampling rate and 100 MHz intermediate frequency (IF), the modulator achieves 61 dB dynamic range (DR) and 58 dB SNDR while consuming 2.5 mW from a 1V supply. The core area in 28 nm LP CMOS is 0.04 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . A 38.6 fJ/conv.-step figure of merit is achieved.

A Non-binary C-R Hybrid DAC for 12 b 100 MS/s CMOS SAR ADCs with Fast Residue Settling

This work proposes two versions of a 12 b 100 MS/s successive-approximation register (SAR) ADC based on a non-binary C-R hybrid DAC. The proposed DAC applies a non-binary weighted capacitor array to the 7 MSBs to meet the settling requirement of the DAC output and determines the remaining 5 LSBs using the reference voltages generated from a simple resistor string to reduce the DAC area significantly. The Version 1 ADC in a 28 ㎚ CMOS adopts a synchronous SAR logic and a comparator with a tail capacitor and a reset switch to minimize power consumption. The Version 2 ADC in a 0.18 ㎛ CMOS employs an asynchronous SAR logic with simple meta-stability correction logic to achieve high-speed operation. The Version 1 ADC which has an active die area of 0.042 ㎟ shows a maximum signal-to-noise-and-distortion ratio (SNDR) and spurious-free dynamic range (SFDR) of 62.3 and 77.3 ㏈, respectively, consuming 1.3 ㎽ with a 1.0 V supply voltage. The Version 2 ADC is based on a similar analog circuit topology, showing a maximum SNDR and SFDR of 60.1 and 73.5 ㏈, respectively, with an active die area of 0.30 ㎟, operating at a 1.8 V supply voltage.

A 4GS/s 8‐bit time‐interleaved SAR ADC with an energy‐efficient architecture in 130 nm CMOS

AbstractThis paper presents the design, implementation, and measurements of a 4 GS/s, 8‐bit resolution, time‐interleaved (TI) analog‐to‐digital converter (ADC) comprised of 32 asynchronous successive approximation register (SAR) ADCs. The chip is fabricated in a 130 nm CMOS process. This prototype achieves the highest sampling rate and the best efficiency for a SAR TI‐ADC in the process used. An energy‐efficient hierarchical T&amp;H architecture, ranked in a 4 × 8 structure, has been used to interleave the aforementioned high number of SAR ADCs avoiding the power hungry buffers typically used in the input signal path and/or T&amp;H outputs. The sampling architecture includes programmable delay cells with up to 104 fs resolution to calibrate sampling time errors. Additionally, the input matching network uses an on‐chip inductance to mitigate the impact of the packaging on the analog bandwidth. An efficient SAR ADC implementation is achieved by an optimized comparator design, which allows for both, noise and asynchronous clock control, and includes background DC offset calibration. The test chip is the core of a measurement platform dedicated to the evaluation of mismatch calibration techniques for ADCs used in high speed digital communication systems. To enable this application, a 32Gb/s low‐voltage differential signaling interface is included to transmit the samples off‐chip without any decimation. The TI‐ADC achieves a peak 7.09 effective number of bits (ENOB) (5.47ENOB at Nyquist) and 1.3 GHz input bandwidth with a power consumption of 93 mW at 1.2 V. Each SAR ADC channel achieves a Walden figure of merit (FOM) of 123fJ/conv‐step and owing to the efficient interleaved architecture the full TI‐ADC achieves a peak FOM of 171fJ/conv‐step (526fJ/conv‐step at Nyquist).

Design of a Low-power 10-Bit 250-kS/s SAR ADC for Neural Recording Applications

This paper presents a low-power 10-bit successive approximation register (SAR) analog-to-digital converter (ADC) for neural recording applications. The proposed SAR ADC uses a modified VCM-based switching scheme to reduce the switching power. In addition, asynchronous SAR logic operation is used to avoid using any internal high-speed clock generator. A calibration technique was realized for the comparator offset to enhance the accuracy of the SAR ADC. The ADC was designed using a standard 180-nm CMOS process, and its core area occupies only 0.15 mm². It operates at 250 kS/s with a 1-V supply voltage and consumes 4.2 μW. An ENOB of 9.72 and FoM of 19.92 fJ/conv-step were also achieved.

A 6.94-fJ/Conversion-Step 12-bit 100-MS/s Asynchronous SAR ADC Exploiting Split-CDAC in 65-nm CMOS

This paper presents a 12-bit 100-MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) for low-power wireless and imaging systems. A split-capacitor digital-to-analog converter (CDAC) structure is adopted for reducing the core area and improving the sampling speed. The linearity of the CDAC is calibrated by programming the least-significant-bits (LSBs) dummy capacitor. The unit capacitor in the CDAC array is customized for higher symmetry and reducing their mismatch. Our SAR ADC is based on asynchronous logic, and its timing is controlled by a delaying block in the critical path. The prototype is fabricated in a 65-nm CMOS process with a 1.2 V supply and occupies an active area of 0.029 mm2. With a 100-MS/s sampling rate, the measured ENOB scores 10.17 bits for 1.5 MHz input with a figure-of-merit (FoM) of 6.94 fJ/conversion-step. It can achieve 8.83 bits for Nyquist input signal.

A low-power 10-bit 0.01-to-12-MS/s asynchronous SAR ADC in 65-nm CMOS

During the last decades we have witnessed the performance improvement and the aggressive growth of the complexity of integrated circuits (ICs). The progressive size reduction of transistors in recent technological nodes has allowed and even compelled IC designers to perform analog tasks in the digital domain, increasing the demand for analog-to-digital converters (ADCs). This work presents the design and implementation of a low power, differential, asynchronous successive approximation register analog-to-digital converter (SAR ADC) in a 65-nm CMOS technology. The ADC works in a flexible range of sampling rates, from a few kS/s up to 12.0 MS/s, being suitable for application in a wide spectrum of low power systems and subsystems, such as biosignal recorder interfaces and frontend of wireless receivers. At maximum sampling rate, the post-layout simulated circuit achieved an effective number of bits (ENOB) of 9.65 and a power consumption of 151.4 µW, leading to a Figure of Merit of 15.8 fJ/Conversion-step; at 10.0 kS/s sampling rate, the ENOB is almost the same, 9.63, but the power consumption is reduced to only 0.26 µW. The occupied area of the implemented ADC is 0.074 mm2.

Design of binary weighted DAC for asynchronous ADC with improved slew rate and with calibrated size of capacitors

This work proposed a binary-weighted Digital-to-Analog Converter (DAC), which is designed to be used in Asynchronous successive approximation register (SAR) based Analog-to-digital converters (ADCs) specifically and in other relevant operations .The design has yielded an improved slew rate, and it is less prone to noise as the size of capacitors is taken in accordance with KT/C noise calculation. For achieving all mentioned goals, and to restrict the size of DAC, within suitable dimensions charge scaling DACs are used. One more advantage of this design is its accuracy, further it does not require op-Amps for its operation. Results of statistical simulation and mathematical consideration are published which depicts the supremacy of the design. A high-resolution DAC designed for this specific purpose has to have special consideration for the effect of local mismatch, parasitic and matching of the capacitors, for that, the common-centroid approach has been followed. This design has displayed a high resolution with small unit capacitances and that too without expensive factory calibration.