Ar Ion Research Articles

On the Shift of the Maximum of the Polar Angular Distribution of Sputtered Atoms in the MD Model of the (001) Ni Face Sputtering

Using an up-to-date full molecular dynamics model of sputtering of single crystals, taking into account the incidence of ions on the surface, the peculiarities and mechanisms of atom sputtering during bombardment of the (001) Ni face with 200 eV Ar ions are studied for two target temperatures. It is shown for the first time that with an increase in the energy of sputtered atoms, not only the maximum of their polar angular distribution in the azimuthal direction toward the Wehner spots, but also the maximum of the polar angular distribution integrated over the azimuthal angles shifts first toward the normal to the surface, and then in the opposite direction. The polar distribution integrated over the azimuthal angle is formed by atoms ejecting from the surface at much larger polar angles than in the final (observed) distribution. Both effects are explained in terms of the surface mechanism of single crystal sputtering.

The influence of structural defects on the electrical and infrared emission properties of VO2 thin films

Defect engineering is widely used in the modification of transition metal oxides. In this study, defects are introduced into the polycrystalline VO2 film by the energetic Ar ion irradiation, and the influence of structural defects on the electrical and infrared emission properties of VO2 thin films have been investigated. The decrease in electrical switching ratio with the increase of defect ratio (displacement per atom (dpa)) can be described as R10°C/R90°C=2.032×(dpa+0.005)−1.8069, while the infrared modulation performance is Δε=−0.119×ln(dpa+0.061). The dpa thresholds of the electrical switching ratio and the infrared modulation performance are ηdpaRR = 0.005/atom and ηdpaΔε = 0.0426/atom, respectively, indicating that the electrical switching ratio of VO2 films is more responsive to defects than the infrared modulation performance. The relationship between transition temperature and defect ratio has be determined. Concerning electrical properties, the heating phase transition temperature can be described as TMITHeating=25.88−10.93×ln(dpa+0.01); while for infrared emission modulation, the heating phase transition temperature is given by Tε−MITHeating=31.65−8.18×ln(dpa+0.01). While reducing the phase transition temperature, the VO2 thin films still exhibit an electrical switching ratio of more than two orders of magnitude and obvious infrared modulation performance. It not only offers a viable solution for broadening the application scope of VO2 but also contributes to understanding the role of defects in VO2 thin films for further research.

Ultrathin SiONC passivation of c-Si by UHV thermal annealing in O₂/N₂: Chemical composition, morphology, and photoluminescence insights

This study investigates the impact of Ultra-High Vacuum (UHV) Thermal annealing in a N₂/O₂ atmosphere on the passivation of Ar ion etched crystalline silicon (c-Si) surfaces. A comprehensive analysis of the resulting ultrathin Silicon OxyNitride Carbide layer (SiONC) was conducted using X-ray Photoelectron Spectroscopy (XPS), Ultra-Violet Spectroscopy (UPS), Photoluminescence Spectroscopy (PL), and Atomic Force Microscopy (AFM). XPS revealed a significant transformation in chemical composition from a carbon-rich contaminated surface SiO1.02C2.98 to an oxygen- and nitrogen-containing passivated layer SiO0.13N0.10C0.28. UPS measurements elucidated changes in the electronic structure and Fermi level position at the c-Si/SiONC interface. AFM imaging demonstrated the formation of non-uniform SiONC islands, influencing surface morphology. Notably, PL spectroscopy indicated enhanced orange and red luminescence with energies of 2.0 and 1.73 eV, respectively, attributed to the SiONC layer. The enhanced luminescence, coupled with improved thermal stability and oxidation resistance, positions the SiONC layer as a promising material for advancing the performance of silicon-based optoelectronic devices, such as solar cells and light-emitting diodes (LEDs). This study provides fundamental insights into the correlation between the chemical, electronic, and morphological properties of the SiONC layer and its potential for improving c-Si device performance.

Annealing influence on stoichiometry and band alignment of 4H-SiC/SiO2 interface evaluated by x-ray photoelectron spectroscopy

Abstract Post oxidation annealing (POA) is a crucial technique for enhancing the performance of SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). This study investigates the impact of nitrogen-based POA on the 4H-SiC/SiO2 interface, utilizing X-ray photoelectron spectroscopy (XPS) to assess changes in stoichiometry and band alignment. We discovered that high-temperature nitrogen POA significantly refines the interface quality, shifting the SiOxCy binding energy from 101.3 eV (at 400°C) to 102.1 eV (at 1150°C) and reducing the C:Si ratio from 1.120 (at 400°C) to 0.972 (at 1150°C), indicating reoxidation and transition from C-rich interface to Si-rich interface. Despite improvements, the conduction band offset at the interface, decreases from 2.59 eV to 1.62 eV with increasing annealing temperature, suggesting a higher likelihood of electron tunneling. This finding underscores the necessity of evaluating band offsets introduced by POA to ensure the reliability of SiC MOSFETs. Additionally, excessive Ar ion etching introduces residual Ar and surface charges, causing band bending and an increased density of states in the valence band of the 4H-SiC substrate.

Monte Carlo Simulation of Radioactive Elements Production in Tissues by Spallation in Cancer Therapy

Purpose: High-energy heavy ions generated by accelerators utilized in industrial and medical uses. Ar, C, and He heavy ions have been used in the treatment of cancer. In this research, it was tried to calculate the radioactive elements production in healthy tissues around tumors by heavy ions spallation process in the direct usage of high-energy ions for the treatment of cancerous tumors. Materials and Methods: The radioactive elements production in body tissues irradiated with heavy ions was calculated by Monte Carlo N Particle X-version (MCNPX) code based on the Monte Carlo method. The F8 tally card with FT8 command was utilized to derive the activation and spallation data in the range of Z1 to Z2 atomic numbers. Results: A wide range of radioactive elements was created in healthful tissues in Ne, C, Ar, and He heavy ions therapy. Results show that 10Be,14C, 26Al, 36Cl, 39Ar, 40K, 39Ar, 32Si, 22Na, and 36Cl radioactive materials were produced for high-energy heavy ions spallation in healthy soft tissue. Conclusion: The results of this research show that due to using directly high-energy ions to treat internal tumors, healthy soft tissue is activated. Also, by irradiated Ne, C, Ar, and He ions, the radioactive elements are produced with high gains and long half-lives. Therefore, in the therapy of cancerous tumors with high-energy ions, due to the production of radioactive agents, healthy tissues are at high risk.

Laterally Modulating Carrier Concentration by Ion Irradiation in CdO Thin Films for Mid‐IR Plasmonics

AbstractThis report demonstrates tunable carrier densities in CdO thin films through local ion irradiation, providing lateral control of mid‐IR optical properties. Ion‐solid interactions produce donor‐like defects that boost electron concentrations from the practical minimum of 2.5 × 1019 cm−3 to a maximum of 2.5 × 1020 cm−3 by metered ion exposure. This range is achieved using He, N, Ar, or Au ions at 1–2.8 MeV; when normalized by displacements per atom, all ion species produce comparable results. Since CdO is well‐described by the Drude model, irradiation‐tuned carrier densities directly alter the infrared dielectric function, and in turn, mid‐infrared optical properties. Further, it is demonstrated that by combining irradiation with traditional lithography, CdO films expose to ions in the presence of 3‐µm thick, patterned photoresist exhibit lateral carrier density profiles with ≈400‐nm resolution. Scanning near‐field optical microscopy reveals sharp optical interfaces with almost no companion contrast in surface morphology, microstructure, or crystallinity. Finally, CdO lateral homostructures supporting surface plasmon polaritons (SPPs) are demonstrated whose dispersion relation can be tuned through periodic patterning in a monolithic platform by simple nanofabrication. Numerical simulations show these polaritons result from strong coupling between excitations at CdO plasma frequencies and SPPs supported by the platinum substrate.

Simulation of ion beam sputtering with OKSANA and SRIM: A comparative study

The energy distributions and average energies of sputtered particles are calculated using simulation codes OKSANA and SRIM-2013. Most simulations refer to an amorphous Ni target bombarded by normally incident Ar ions of keV energies. Sputtering of Si, Ti, V and Nb targets is also considered. It is shown that SRIM can strongly overestimate the contribution of fast ejected atoms, especially for targets irradiated with lighter ions. The effect is amplified by using the surface binding energies found to fit the measured sputter yields. It is concluded that the enhanced ejection of fast particles is associated with sputtering due to backscattered ions. The role of the first collision of an incident ion with a target atom is particularly noted. A comparison of the OKSANA calculated results with the data of other codes (TRIM.SP, ACAT) and experimental data showed their reasonable agreement.

Microsolvation of a Proton by Ar Atoms: Structures and Energetics of ArnH+ Clusters.

We present a computational investigation on the structural arrangements and energetic stabilities of small-size protonated argon clusters, Ar nH +. Using high-level ab initio electronic structure computations, we determined that the linear symmetric triatomic ArH +Ar ion serves as the molecular core for all larger clusters studied. Through harmonic normal-mode analysis for clusters containing up to seven argon atoms, we observed that the proton-shared vibration shifts to lower frequencies, consistent with measurements in gas-phase IRPD and solid Ar-matrix isolation experiments. We explored the sum-of-potentials approach by employing kernel-based machine-learning potential models trained on CCSD(T)-F12 data. These models included expansions of up to two-body, three-body, and four-body terms to represent the underlying interactions as the number of Ar atoms increases. Our results indicate that the four-body contributions are crucial for accurately describing the potential surfaces in clusters with n> 3. Using these potential models and an evolutionary programming method, we analyzed the structural stability of clusters with up to 24 Ar atoms. The most energetically favored Ar nH + structures were identified for magic size clusters at n = 7, 13, and 19, corresponding to the formation of Ar-pentagon rings perpendicular to the ArH +Ar core ion axis. The sequential formation of such regular shell structures is compared to ion yield data from high-resolution mass spectrometry measurements. Our results demonstrate the effectiveness of the developed sum-of-potentials model in describing trends in the nature of bonding during the single proton microsolvation by Ar atoms, encouraging further quantum nuclear studies.

Assessment of the impact of fuelling puff location on divertor impurity compression and enrichment in STEP

In order to achieve a compatible solution between the divertors and the core, SOLPS-ITER simulations were performed in a Spherical Tokamak for Energy Production (STEP) connected double-null geometry to investigate the possibility of using deuterium ( D2 ) puff locations as an actuator for divertor argon (Ar) compression/enrichment. It was found that puffing D2 from the inner-midplane (IMP) D2 puff enhanced Ar compression and enrichment on the high-field-side (HFS) and lowered the required upstream Ar fraction to achieve acceptable target conditions. An interesting link was found between argon compression and the number of stagnation points of the middle-charge-state Ar ions in the HFS SOL, Nst ; significantly improved compression and enrichment were obtained for Nst=1 (corresponding mostly to the cases with IMP puff) compared to Nst=3 (corresponding mostly to the cases without IMP puff). An intermediate compression and enrichment was obtained when Nst=5 . The change of Nst from 3 to 1 (or 5) was achieved by a combination of D+ outflow, high collision frequency, and flipped temperature gradients around the IMP. Given a possible drawback of ΓDOMP+IMP , that is a direct effect on the upstream main plasma density and temperature, we propose ΓDPFR+IMP as the best solution, balancing the negative and positive effects of private-flux-region and IMP D2 puffs. Further studies will be carried out both experimentally and numerically.

Damage kinetics in high-temperature irradiated Ni crystals

High-temperature (∼800 K) ion irradiation with 380 keV Ar ions was used to modify the surface of Ni single crystals in order to generate radiation defects and mimic the effect of neutrons avoiding sample activation. The modified 800 nm thick layer was analyzed regarding structural and mechanical properties utilizing a combination of experimental and simulation techniques. The ion implantation fluence ranged from 1 × 1014 cm−2 up to 1 × 1016 cm−2, which corresponds to values of displacements per atom from 0.25 to 25, respectively. The structural characterization was performed by Rutherford Spectroscopy in Channeling mode (RBS/C) associated with scanning (SEM) and transmission electron microscopy (TEM). The experimental results were supported by Monte Carlo (McChasy) and Molecular Dynamics (MD-LAMMPS) simulations. The simulations performed using the second generation of the McChasy code show that the influence of bubbles formed inside the material is not negligible and affects the quantitative analysis of defects in the simulated spectra. A second step in damage kinetics was revealed for the highest dose (i.e., 25 dpa) as a consequence of the entanglement of dislocations and agglomeration of noble gas bubbles, which was confirmed by TEM analysis. Moreover, nanomechanical results confirm that Ar bubbles deteriorate mechanical properties such as hardness.

Argon plasma-enhanced UV light emission from ZnO submicrowires grown by hydrothermal method

In this work, the optical, morphological, and structural improvements of vertically aligned, hydrothermally grown ZnO submicrowires (SMWs) treated with a 250 W, 250 V RF argon plasma (Ar) during different exposure times were investigated by scanning and transmission electrons microscopy, X-ray diffraction, and micro-Raman and photoluminescence (PL) spectroscopies. In two steps, the SMWs were synthesized in an aqueous medium at low temperatures. The plasma-treated samples showed significantly improved room-temperature PL compared to untreated samples. All the treated samples exhibited a substantial increase of the near band edge UV emission intensity and a decrease of the deep level emission in the visible. The samples treated for 4 minutes presented the best UV/vis intensity ratio of ∼ 1568 (an increase of ⁓174-fold with respect to the untreated sample). The analysis of the UV band in terms of the first and second phonon replica of the excitonic emission indicated that the Ar plasma treatment favors the multiple phonon-exciton coupling, with partial correlation with the observed overall increase of the UV/visible intensity ratio. From the PL measurements at low temperatures, the presence of excitons bound to H donors in the ZnO structure was inferred. The possible reasons for the Ar plasma-induced enhancement of the UV emission from the treated SMWs are discussed in terms of previous work, the observed morphology and changes expected to occur at the SMW surfaces due to Ar ion impacts from the plasma.

Comparison of collective acceleration of ions in a luce diode in residual atmospheres of air, argon and krypton

The paper compares the collective acceleration of ions in a Luce diode in residual atmospheres of air, argon and krypton at pressures of 6–156 mPa, evaluating the efficiency of capture of Ar and Kr ions into collective acceleration from their residual atmospheres. At a diode voltage of ∼232 kV, proton energies were 510 ± 38, 619 ± 62 and 567 ± 59 keV for air, argon, and krypton atmospheres, respectively, while the number of protons per shot was approximately 2 and 3 times higher in the argon and krypton residual atmosphere compared to the normal residual atmosphere. This increase in energy also led to a significant increase in the proportion of protons with energies greater than 3.02 MeV - to 1010 per shot on average. It was found that with increasing argon pressure, the diode current noticeably decreases, and with increasing krypton pressure, on the contrary, the diode current noticeably increases, which can be explained by the fact that argon is more neutral than krypton. The efficiency of capture of Ar and Kr ions into collective acceleration from their residual atmospheres was estimated as 0.06 % and 0.19 %, respectively.

Anisotropic wettability transition on nanoterraced glass surface by Ar ions

Ion beam sputtering (IBS) can induce nanoripple patterns in a short time on variety of materials for wide range of applications. In this work, we describe the nanoripple as well as terrace pattern formation by IBS on soda-lime glass surfaces and the mechanisms leading to such pattern formations. The role of ion energy, ion fluence, and ion incidence angle on the morphology of the structural features is systematically explored. For a range of ion beam parameter values with energy varying from 600 to 1500 eV and fluence in the range 9.7 × 1017 to 2.0 × 1019 ions/cm2 at fixed incidence angle of 45°, transition of ripples to terraces has been observed. The experimental results are explained on the basis of recently modified KS equation which clearly explains the simultaneous role of nonlinear cubic term in the terrace formation. It is also demonstrated how ion beam can be used to tailor the wettability of glass surface and makes it hydrophobic in nature. Due to pattern formation, anisotropic hydrophobicity is observed showing an increasing trend owing to the magnification of the amplitude of nanopatterns developed on the surface.

Effects of Ar ion bombardment on the structure and properties of β-quartz

β-quartz is an important component that affects the physical and chemical properties of glass-ceramics. The material removal process of ion beam machining is complicated as one of the ultra-precision machining forms. Therefore, it is important to understand the removal mechanism of ion beam machining materials. The methods of molecular dynamics (MD) and first-principles were adopted to investigate the microscopic mechanism of ion beam bombardment of the β-quartz structure. The damage evolution of structures and the evolution of material properties caused by defects respectively from the atomic and electronic levels. Through MD analysis, we find that the random collision between incident ions and matrix atoms can lead to the formation of sputtered atoms. The incidence of ions will increase the disorder degree of the matrix, and the influence on the disorder degree at different depths of the matrix is different. The degree of disorder increases obviously in the range of 50–70 Å from the surface of the matrix. It has a significant impact on the surface topology of the matrix, the number of defects, surface roughness, and matrix density. The results of first-principle calculation show that the refraction, absorption and other characteristics of the system are significantly different with different doping forms, and the energy loss is most affected by substituted doping. And the substituted doping defects have the most significant effects on the structural energy loss. Among, the Ar-substituted O doping structure leads to higher energy loss, and the peak energy loss intensity reaches 5.146. In contrast, the Ar-substituted Si doping structure causes the least energy loss, the intensity is 2.543. This study provides a theoretical basis for the selection of parameters and the realization of ultra-smooth surface in actual ion beam machining.

Hyperdoping of germanium with argon toward strain-doping-induced indirect-to-direct bandgap transition in Ge

The first-principles calculations have recently shown that implanting sufficient noble gas atoms into germanium (Ge) can expand its lattice to achieve the desired tensile strain for indirect-to-direct bandgap transition to develop the on-chip high-efficient light emitter. Here, to experimentally prove this strain-doping concept, we implant argon (Ar) ions into Ge and then recrystallize the Ar-doped amorphous Ge (a-Ge) layer using nanosecond laser annealing (NLA) and furnace thermal annealing (FTA), respectively. The NLA effectively recrystallizes the 12 nm thick a-Ge layer with minimal loss of Ar dopants, while FTA fails to fully recrystallize it and results in significant loss of Ar dopants. The regrown Ge layer with Ar concentration above the critical value (0.8%) for bandgap transition is 3.8 nm thick, making it a challenge to distinguish the photoluminescence signal of strain-doped layer from the substrate. To overcome this, increasing the implantation energy and adding a capping layer may be necessary to further prevent Ar loss and achieve a strain-doped layer with sufficient depth. These findings provide promising view of the strain-doping concept for direct-bandgap emission from Ge.

Determining the Best Ar Ion Milling Sample Preparation Conditions for SEM Applications

Determining the Best Ar Ion Milling Sample Preparation Conditions for SEM Applications

Surface quality and microstructure evolution in fused silica under SF6/Ar reactive ion beam etching

The SF6/Ar reactive ion beam etching (RIBE) was proposed to explore the evolution of surface quality, subsurface defects, surface molecular structure, and chemical composition of fused silica. Also, the mechanism of reactive ion beam etching of fused silica surfaces was discussed. The results show that RIBE can maintain the original surface roughness by choosing suitable process parameters. this etching process can suppress the replication and expansion of subsurface defects and the deposition of reactants without bringing obvious contamination. The concentration of structural defects reaches a minimum at an etching depth of about 2 μm. However, further etching may lead to an increase in the chemical structure defects on the surface. The evolution of the intrinsic ring structure demonstrates that most intrinsic defects tend to reorganize into short (Si-O) ring structures. The etching mechanisms of Ar ions were discussed by simulating the stopping power and energy deposition. Phonon dissipation through atomic displacements and atomic vibrations is an important way of energy loss. Phonon vibrations and atomic dislocations induced by nuclear collisions are not only important factors causing the enhancement of electron-phonon coupling but also important causes of surface structural defects. The researches provide a theoretical basis for in-depth understanding of fused silica surface defect repair.

Latest Developments in Post-FIB Concentrated Ar Ion Beam Milling of TEM Specimens with Large Electron-transparent Areas

Latest Developments in Post-FIB Concentrated Ar Ion Beam Milling of TEM Specimens with Large Electron-transparent Areas

Electric field driven focusing and transport of plasma ion beams by micro-glass capillaries beyond the self-focusing limit

Micro-glass capillaries emerge as an important tool for the lossless guiding and focusing of ion beams (Kojima 2018 J. Phys. B: At. Mol. Opt. Phys. 51 042001). The self-focusing mechanism of the capillaries is primarily governed by charged patches induced on their inner walls by the incident beam (Stolterfoht et al 2002 Phys. Rev. Lett. 88 133201). However, the dominance of space charge forces over self-focusing forces in intense (J ≈ 1 A m−2) ion beams establishes a self-focusing limit (Maurya et al 2019 J. Phys. D: Appl. Phys. 52 055205), posing challenges to beam focusing beyond this limit. In this work, a novel method is introduced, demonstrating electrical control over the charge patch dynamics through an externally applied bias voltage, thereby enabling the focusing of Ar ion beams beyond the self-focusing limit. Experimental results reveal that adjusting the biasing voltage allows overcoming the self-focusing limit, resulting in the generation of a high-intensity ( Jout≈3.05×105 A m−2) nano-beam (∼160 nm). Furthermore, electrical control is shown to enhance the performance of both straight and tapered capillaries (SC/TC), with the TC being more effective for nano-beam generation. A Particle-In-Cell (PIC) simulation code has been developed to explain the experimental results. The implications of high-intensity nano ion beams in advancing nanopatterning, nanoscale material analysis, and matter wave interferometry, underscore significant contributions to research and innovation within electronics, materials science, nanotechnology, and emerging quantum technologies.

Synchrotron-based x-ray diffraction analysis of energetic ion-induced strain in GaAs and 4H-SiC

Strain engineering using ion beams is a current topic of research interest in semiconductor materials. Synchrotron-based high-resolution x-ray diffraction has been utilized for strain-depth analysis in GaAs irradiated with 300 keV Ar and 4H-SiC and GaAs irradiated with 100 MeV Ag ions. The direct displacement-related defect formation, anticipated from the elastic energy loss of Ar ions, can well explain the irradiation-induced strain depth profiles. The maximum strain in GaAs is evaluated to be 0.88% after Ar irradiation. The unique energy loss depth profile of 100 MeV Ag (swift heavy ions; SHIs) and resistance of pristine 4H-SiC and GaAs to form amorphous/highly disordered ion tracks by ionization energy loss of monatomic ions allow us to examine strain buildup due to the concentrated displacement damage by the elastic energy loss near the end of ion range (∼12 μm). Interestingly, for the case of SHIs, the strain-depth evolution requires consideration of recovery by ionization energy loss component in addition to the elastic displacement damage. For GaAs, strain builds up throughout the ion range, and the maximum strain increases and then saturates at 0.37% above an ion fluence of 3×1013 Ag/cm2. For 4H-SiC, the maximum strain reaches 4.6% and then starts to recover for fluences above 1×1013 Ag/cm2. Finally, the contribution of irradiation defects and the purely mechanical contribution to the total strain have been considered to understand the response of different compounds to ion irradiation.