Applications In Spintronic Devices Research Articles

Realizing ferromagnetic semiconductors in SrRu1−xZrxO3 alloys

Using first principle calculations, we study the structural, electric and magnetic properties of SrRu1−xZrxO3 (0 ≤ x ≤ 1). The spin-polarization calculations present that SrRu1−xZrxO3 is a ferromagnetic metal at x = 0, a ferromagnetic semiconductor at x = 0.125, 0.25, an antiferromagnetic semiconductor at x = 0.5 and a nonmagnetic insulator at x = 1, which is in agreement with available experiments. As increasing Zr contents, the lattice parameters and band gaps of SrRu1−xZrxO3 increase while the energy difference between antiferromagnetic and ferromagnetic states decreases. Through Ru-O and Zr-O bonds, hybridization between Ru 4d and Zr 4d states near the Fermi level becomes strong. As a result, Ru 4d states split and then metal-insulator transition occurs at x = 0.125 due to Zr. Ferromagnetic semiconductors are first predicted in SrRu1−xZrxO3 alloys, which may have potential applications in spintronic devices.

Biaxial strain modulated electronic structures of layered two-dimensional MoSiGeN4 Rashba systems.

The two-dimensional (2D) MA2Z4 family has received extensive attention in manipulating its electronic structure and achieving intriguing physical properties. However, engineering the electronic properties remains a challenge. Herein, based on first-principles calculations, we systematically investigate the effect of biaxial strains on the electronic structure of 2D Rashba MoSiGeN4 (MSGN), and further explore how the interlayer interactions affect the Rashba spin splitting (RSS) in such strained layered MSGN systems. After applying biaxial strains, the band gap decreases monotonically with increasing tensile strains but increases when the compressive strains are applied. An indirect-direct-indirect band gap transition is induced by applying a moderate compressive strain (<5%) in the MSGN systems. Due to the symmetry breaking and moderate spin-orbit coupling (SOC), the monolayer MSGN possesses an isolated RSS near the Fermi level, which could be effectively regulated to the Lifshitz-type spin splitting (LSS) by biaxial strain. For instance, the LSS ← RSS → LSS transformation of the Fermi surface is presented in the monolayer and a more complex and changeable LSS ← RSS → LSS → RSS evolution is observed in bilayer and trilayer MSGN systems as the biaxial strain varies from -8% to 12%, which actually depends on the appearance, variation, and vanish of the Mexican hat band in the absence of SOC under different strains. The contribution of the Mo-dz2 orbital hybridized with the N-pz orbital in the highest valence band plays a dominant role in band evolution under biaxial strains, where the RSS → LSS evolution corresponds to the decreased Mo-dz2 orbital contribution. Our study highlights the biaxial strain controllable RSS, in particular the introduction and even the evolution of LSS near the Fermi surface, which makes the strained MSGN systems promising candidates for future applications in spintronic devices.

High Curie temperature ferromagnetic monolayer T-CrSH and valley physics of T-CrSH/WS2 heterostructure.

Two-dimensional magnetic materials are attracting widespread attention not only for their excellent applications in spintronic devices but also for their potential to regulate valley splitting, which is crucial for valleytronics. Herein, we design a monolayer Janus ferromagnetic semiconductor T-CrSH by using first-principles calculations. We reveal that monolayer T-CrSH has a magnetic moment of 3μB per unit cell, which is primarily contributed by the 3d orbitals of the Cr atom. Monte Carlo simulations suggest that the Curie temperature of T-CrSH is 193 K, and it can rise to 402 K when a 5% tensile strain is applied. Furthermore, the valley degeneracy of WS2 can be lifted when monolayer T-CrSH is used as a substrate. The obtained valley splitting in the conduction band is 13.7 meV and that in the valence band is 157.5 meV. In addition, the large valley polarization of 12.8 meV in the conduction band makes it easy to achieve an electron-doped valley Hall current and spin Hall current when performing in an in-plane electric field.

Recent advances in application-oriented new generation diluted magnetic semiconductors

Diluted ferromagnetic semiconductors (DMSs) have attracted widespread attention in last decades, owing to their potential applications in spintronic devices. But classical group-III-IV, and -V elements based DMS materials, such as (Ga,Mn)As which depend on heterovalent (Ga&lt;sup&gt;3+&lt;/sup&gt;, Mn&lt;sup&gt;2+&lt;/sup&gt;) doping, cannot separately control carrier and spin doping, and have seriously limited chemical solubilities, which are disadvantages for further improving the Curie temperatures. To overcome these difficulties, a new-generation DMS with independent spin and charge doping have been designed and synthesized. Their representatives are I-II-V based Li(Zn,Mn)As and II-II-V based (Ba,K)(Zn,Mn)&lt;sub&gt;2&lt;/sub&gt;As&lt;sub&gt;2&lt;/sub&gt;. In these new materials, doping isovalent Zn&lt;sup&gt;2+&lt;/sup&gt; and Mn&lt;sup&gt;2+&lt;/sup&gt; introduces only spins, while doping heterovalent non-magnetic elements introduces only charge. As a result, (Ba,K)(Zn,Mn)&lt;sub&gt;2&lt;/sub&gt;As&lt;sub&gt;2&lt;/sub&gt; achieves Curie temperature of 230 K, a new record among DMS where ferromagnetic orderings are mediated by itinerate carriers. Herein, we summarize the recent advances in the new-generation DMS materials. The discovery and synthesis of several typical new-generation DMS materials are introduced. Physical properties are studied by using muon spin relaxation, angle-resolved photoemission spectroscopy and pair distribution function. The physical and chemical pressure effects on the title materials are demonstrated. The Andreev reflection junction based on single crystal and the measurement of spin polarization are exhibited. In the end, we demonstrate the potential multiple-parameter heterojunctions with DMSs superconductors and antiferromagnetic materials.

Topological transformation of magnetic hopfion in confined geometries

Three-dimensional (3D) topological magnetic structures have attracted enormous interest due to their exceptional spatial structures and intriguing physics. Hopfions, characterized by the Hopf index, are 3D spin textures that emerged as closed twisted skyrmion strings. A comprehensive understanding of magnetic structural transitions within nanostructures is crucial for their applications in spintronics devices. Despite the demonstration of stabilization and current-driven dynamics of hopfion, their behavior in geometric confinement has remained unexplored. Here, we investigate the transformation between hopfions and torons in various nanostructures using micromagnetic simulations. By tailoring the axial ratio of elliptical nanodisks, the elliptical hopfion is found to be transformed into a toron structure. Moreover, the current-driven topological transformation between hopfion and toron has also been realized in finite-sized nanostripes and stepped nanostructures. This deformation and transformation arise from the repulsive potential of the boundaries or edges. To connect real-space observations and 3D topological spin configurations, we simulate the Lorentz transmission electron microscope images of the aforementioned magnetic structures. This study, uncovering the dynamics and transformation of hopfions, will invigorate 3D magnetic structures-based memory and logic devices.

Computational study on the structural, electronic, lattice vibration, and magnetism in Zn(1−x)FexSeyTe(1−y) quaternary materials

In this article, we studied the structural, electrical, lattice vibrational, and magnetic properties of the quaternary compound Zn(1−x)FexSeyTe(1−y) using density functional theory. All the calculations have been performed based on first-principles calculations using Perdew–Zunger [local-density approximation (LDA)] and Hubbard parameter correction (LDA+U) functionals as employed in the Quantum Espresso package. The computed equilibrium lattice parameter for ZnTe is 6.01 Å, and the energy bandgap, Eg, is 1.362 eV, which is consistent with the experimental values as well as the previous reports, respectively. The influence of the co-doping of iron and selenium on electrical and magnetic properties in a ZnTe system is discussed in detail. The co-doping of iron and selenium affects metallic behavior in these systems by forming localized states between the conduction and valance bands. The presence of localized states is related to the metallic properties of the iron atom, specifically iron 3d orbitals. The spin-polarized density of state and band structure computations also confirmed that the iron and selenium co-doped ZnTe system exhibits significant half-metal ferromagnetic and dilute magnetic semiconductor features at room temperature. Furthermore, the phonon calculation of these systems indicated that the systems are dynamically stable and that localized frequency states are created at higher frequencies due to the presence of iron atoms. As a result, the iron and selenium co-doped ZnTe systems can be considered for magnetic and spintronic device applications at room temperature, pending further experimental research.

Li-ion intercalation-driven control of two-dimensional magnetism in van der Waals FePS3 bilayers.

Manipulating two-dimensional (2D) magnetism in layered van der Waals (vdW) materials like FePS3 (FPS), with its wide-ranging applications in flexible spintronic devices, poses a persistent challenge. Through first-principles calculations, we have achieved reversible ferrimagnetic (FiM, FePS3 bilayer) ↔ antiferromagnetic (AFM, 1Li-intercalated FePS3 bilayer) ↔ ferromagnetic (FM, 2Li-intercalated FePS3 bilayer) phase transitions by using a Li-ion intercalation method. Intercalated Li ions significantly enhance the Fe-3d and S-3p hybridization and reduce the Fe-Fe, Li-Fe, Li-S, and Li-P bond lengths. The manipulation of 2D magnetism in Li-intercalated FPS bilayers can be attributed to the charge transfer between two FPS monolayers mediated by Li ions. Moreover, this study offers insights into the underlying physical mechanisms that govern the variations of electronic structures, 2D magnetism, magnetic anisotropy energy, and exchange couplings. Our reversible Li-ion intercalation permits straightforward de-intercalation using a two-step route, thereby reinstating the initial magnetic order of the FPS bilayer. Our purpose-designed FPS bilayer with different Li concentrations and robust exchange coupling not only enriches the Li-intercalation physics in the FPS system but also offers a general pathway for manipulating 2D magnetism in Fe-based vdW trisulfides.

Enhanced ferromagnetism, perpendicular magnetic anisotropy and high Curie temperature in the van der Waals semiconductor CrSeBr through strain and doping.

Two-dimensional (2D) intrinsic van der Waals ferromagnetic semiconductor (FMS) crystals with strong perpendicular magnetic anisotropy and high Curie temperature (TC) are highly desirable and hold great promise for applications in ultrahigh-speed spintronic devices. Here, we systematically investigated the effects of a biaxial strain ranging between -8% and +8% and doping with different charge carrier concentrations (≤0.7 electrons/holes per unit cell) on the electronic structure, magnetic properties, and TC of monolayer CrSeBr by combining first-principles calculations and Monte Carlo (MC) simulations. Our results demonstrate that the pristine CrSeBr monolayer possesses an intrinsic FMS character with a band gap as large as 1.03 eV, an in-plane magnetic anisotropy of 0.131 meV per unit cell, and a TC as high as 164 K. At a biaxial strain of only 0.8% and a hole density of 5.31 × 1013 cm-2, the easy magnetization axis direction transitions from in-plane to out-of-plane. More interestingly, the magnetic anisotropy energy and TC of monolayer CrSeBr are further enhanced to 1.882 meV per unit cell and 279 K, respectively, under application of a tensile biaxial strain of 8%, and the monolayer retains its semiconducting properties throughout the entire range of investigated strains. It was also found that upon doping monolayer CrSeBr with holes with a concentration of 0.7 holes per unit cell, the perpendicular magnetic anisotropy and TC are increased to 0.756 meV per cell and 235 K, respectively, and the system tends to become metallic. These findings will help to advance the application of 2D intrinsic ferromagnetic materials in spintronic devices.

Elucidating the structure of donor-acceptor conjugated polymer aggregates in liquid solution.

High-spin donor-acceptor conjugated polymers are extensively studied for their potential applications in magnetic and spintronic devices. Inter-chain charge transfer among these high-spin polymers mainly depends on the nature of the local structure of the thin film and π-stacking between the polymer chains. However, the microscopic structural details of high-spin polymeric materials are rarely studied with an atomistic force field, and the molecular-level local structure in the liquid phase remains ambiguous. Here, we have examined the effects of oligomer chain length, side chain, and processing temperature on the organization of the high-spin cyclopentadithiophene-benzobisthiadiazole donor-acceptor conjugated polymer in chloroform solvent. We find that the oligomers display ordered aggregates whose structure depends on their chain length, with an average π-stacking distance of 3.38 ± 0.03 Å (at T = 298 K) in good agreement with the experiment. Also, the oligomers with longer alkyl side chains show better solvation and a shorter π-stacking distance. Furthermore, the clusters grow faster at higher temperature with more ordered aggregation between the oligomer chains.

Charge doping and electric field tunable ferromagnetism and Curie temperature of the MnS2 monolayer.

Two-dimensional ferromagnets with a long-range ferromagnetic ordering at finite temperature present a bright prospect for their potential applications in nanoscale spintronic devices. The tuning of their intrinsic ferromagnetism and Curie temperature is essential for the development of next-generation data storage and spintronic devices. In this work, the electronic structures, ferromagnetism and Curie temperature of two-dimensional MnS2 monolayer are controlled by charge doping and electric field using first principles calculations. The results show that the dynamic and thermal stability of monolayer MnS2 for all of the cases can be still maintained. Moreover, there is no existence of phase transition and all MnS2 monolayers at any charge doping concentrations and electric field intensities favor ferromagnetic coupling. For the manipulation of electron doping, the calculated total magnetic moment Mtot of the MnS2 monolayer exhibits an increase from 3.112 to 3.491μB per unit cell. Further analysis indicates that a transition from half-metal to metal occurs by introducing the charge doping and vertical electric field, and the Mn 3d electronic states are the major determinants of ferromagnetism. Additionally, the charge doping enables the magnetic anisotropy energy to transform from an in-plane easy axis to the magnetization direction out of the plane. The Curie temperature Tc of the MnS2 monolayer can be moderately enhanced above room temperature by hole doping and application of a vertical electric field. Remarkably, Tc reaches its peak at 767 K at a hole doping concentration of -0.8e. This work enriches the microscopic understanding of the tuning mechanism of ferromagnetism and supplies a sound theoretical basis for subsequent experimental studies.

Multiferroicity driven by single-atom adsorption on the two-dimensional semiconductor ScCl3.

In recent years, two-dimensional (2D) transition metal halides (such as CrI3) have received more and more attention for the practical applications of spintronic devices due to their unique electronic and magnetic properties. However, most 2D transition metal halides are centrosymmetric and are non-polar, which hinders their applications on nonvolatile memories. Here, on the basis of first-principles calculations, we predict that the adsorption of K single-atoms on the ScCl3 monolayer (denoted as K@ScCl3) could break the structural centrosymmetry and induce a reversible large out-of-plane electric polarization. Simultaneously, the adsorption of K single-atoms induces a magnetic moment localized on Sc ions, which forms a ferromagnetic order with an estimated Curie temperature of ∼37 K. These make the K@ScCl3 monolayer a ferromagnetic ferroelectric semiconductor. These findings propose a new route to realize 2D multiferroic materials, which is of great significance for the research and development of spintronics.

Effect of an external/internal magnetic field on the photocurrent in Py-topological insulator heterojunction Ni80Fe20/TI (Bi2Te3/Bi2Se3/Bi2Te2Se)/p-Si devices.

This study demonstrates the fabrication and study of a permalloy (Py)/topological insulator heterojunction, i.e., the Ni80Fe20/TI(Bi2Te3/Bi2Se3/Bi2Te2Se)/p-Si heterojunction, for spintronic device applications at room temperature. In this work, the forward current values, under the absence of a magnetic field, for Ni80Fe20/Bi2Te2Se/p-Si, Ni80Fe20/Bi2Se3/p-Si, and Ni80Fe20/Bi2Te3/p-Si heterojunctions were 12.7 μA, 8.7 μA, and 6.85 μA, respectively; while in the presence of a magnetic field, the corresponding values were 10.8 μA, 7.6 μA, and 4.47 μA, respectively. Such reductions in current were attributed to an increase in the resistance of the p-n junction diode due to Lorentz force and a magnetoresistance effect, which was also verified using magneto-transport measurements. This resulted in a modification of the space charge shape and an increase in the potential barrier. Along with this, the magnetic field also affected the diffusion length, leading to a reduction in the current. Such a phenomenon enables the development of durable devices with improved reliability and longevity under harsh environments. The special features of topological edge states in the presence of a magnetic field can be used for sophisticated sensing applications. The future applications will likely lead to the emergence of other novel applications across disciplines such as computing, health, materials science, and energy harvesting.

Magneto-acoustic coupling: Physics, materials, and devices

Acoustic wave in solid has two modes of propagation: the bulk acoustic wave (BAW), which propagates inside solid in the form of longitudinal or transverse wave, and the surface acoustic wave (SAW), which is generated on the surface of solid and propagates along the surface. In acoustic radio frequency (RF) technologies acoustic waves are used to intercept and process RF signals, which are typified by the rapidly developing RF filter technology. Acoustic filter has the advantages of small size, low cost, steady performance and simple fabrication, and is widely used in mobile communication and other fields. Due to the mature fabrication process and well-defined resonance frequency of acoustic device, acoustic wave has become an extremely intriguing way to manipulate magnetism and spin current, with the goal of pursuing miniaturized, ultra-fast, and energy-efficient spintronic device applications. The integration of magnetic materials into acoustic RF device also provides a new way of thinking about the methods of acoustic device modulation and performance enhancement. This review first summarizes various physical mechanisms of magneto-acoustic coupling, and then based on these mechanisms, a variety of magnetic and spin phenomena such as acoustically controlled magnetization dynamics, magnetization switching, magnetic domain wall and magnetic skyrmions generation and motion, and spin current generation are systematically introduced. In addition, the research progress of magnetic control of acoustic wave, the inverse process of acoustic control of magnetism, is discussed, including the magnetic modulation of acoustic wave parameters and nonreciprocal propagation of acoustic waves, as well as new magneto-acoustic devices developed based on this, such as SAW-based magnetic field sensors, magneto-electric antennas, and tunable filters. Finally, the possible research objectives and applications of magneto-acoustic coupling in the future are prospected. In summary, the field of magneto-acoustic coupling is still in a stage of rapid development, and a series of groundbreaking breakthroughs has been made in the last decades, and the major advances are summarized in this field. The field of magneto-acoustic coupling is expected to make further significant breakthroughs, and we hope that this review will further promote the researches of physical phenomena of the coupling between magnetism and acoustic wave, spin and lattice, and potential device applications as well.

Emergence of exotic electronic and magnetic phases upon electron filling in Na2BO3 (B = Ta, Ir, Pt, and Tl): a first-principles study.

Competition between spin-orbit interaction and electron correlations can stabilize a variety of non-trivial electronic and magnetic ground states. Using density functional theory calculations, here we show that different exotic electronic and magnetic ground states can be obtained by electron filling of the B-site cation in the Na2BO3 family of compounds (B = Ta, Ir, Pt and Tl). Electron filling leads to a Peierls insulator state with a direct band gap to j = 1/2 spin-orbit assisted Mott-insulator to band insulator and then to negative charge-transfer half-metal transition. The magnetic ground state also undergoes a transition from a non-magnetic state to a zigzag antiferromagnetic state, a re-entrant non-magnetic state and finally to a ferromagnetic state. The electron localization function shows a ladder type dimerization or Peierls instability in Na2TaO3. Maximally localized Wannier function calculations reveal delocalization of electrons through the eg orbitals, which form a π bond, and localization of electrons through the t2g orbitals, which form a σ bond, between the neighbouring tantalum ions. Na2TlO3 shows Stoner or band ferromagnetism due to the localized moments with up-spin on oxygen ligands created by the negative charge-transfer character, interacting via the down-spin itinerant electrons of the Tl 5d-O 2p hybridized band. These findings are significant for practical applications; for instance the direct band gap insulator Na2TaO3 shows potential for utilisation in solar cells, while Na2TlO3, which exhibits ferromagnetic half metallicity, holds promise for spintronic device applications.

Electrochemical Intercalation and Exfoliation of CrSBr into Ferromagnetic Fibers and Nanoribbons.

Recent studies dedicated to layered van der Waals crystals have attracted significant attention to magnetic atomically thin crystals offering unprecedented opportunities for applications in innovative magnetoelectric, magneto-optic, and spintronic devices. The active search for original platforms for the low-dimensional magnetism study has emphasized the entirely new magnetic properties oftwo dimensional (2D) semiconductor CrSBr. Herein, for the first time, the electrochemical exfoliation of bulk CrSBr in a non-aqueous environment is demonstrated. Notably, crystal cleavage governed by the structural anisotropy occurred along two directions forming atomically thin and few-layered nanoribbons. The exfoliated material possesses an orthorhombic crystalline structure and strong optical anisotropy, showing the polarization dependencies of Raman signals. The antiferromagnetism exhibited by multilayered CrSBr gives precedence to ferromagnetic ordering in the revealed CrSBr nanostructures. Furthermore, the potential application of CrSBr nanoribbons is pioneered for electrochemical photodetector fabrication and demonstrates its responsivity up to 30µAcm-2 in the visible spectrum. Moreover, the CrSBr-based anode for lithium-ion batteries exhibited high performance and self-improving abilities. This anticipates that the results will pave the way toward the future study of CrSBr and practical applications in magneto- and optoelectronics.

Stacking Order Engineering of Two-Dimensional Materials and Device Applications.

Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral displacement) and twisting (rotation) between atomically thin layers. By altering the stacking order, many new ferroic, strongly correlated and topological orderings emerge with exotic electrical, optical and magnetic properties. Thanks to the weak vdW interlayer bonding, such highly flexible and energy-efficient stacking order engineering has transformed the design of quantum properties in 2D vdW materials, unleashing the potential for miniaturized high-performance device applications in electronics, spintronics, photonics, and surface chemistry. This Review provides a comprehensive overview of stacking order engineering in 2D vdW materials and their device applications, ranging from the typical fabrication and characterization methods to the novel physical properties and the emergent slidetronics and twistronics device prototyping. The main emphasis is on the critical role of stacking orders affecting the interlayer charge transfer, orbital coupling and flat band formation for the design of innovative materials with on-demand quantum properties and surface potentials. By demonstrating a correlation between the stacking configurations and device functionality, we highlight their implications for next-generation electronic, photonic and chemical energy conversion devices. We conclude with our perspective of this exciting field including challenges and opportunities for future stacking order engineering research.

Structural, dielectric, magnetic, optical, and electrical properties of double‐perovskite Sr1.5Mn0.5Fe0.5Hf1.5O6 oxides

AbstractHalf‐metallic ferromagnets (HMFs) exhibit semiconductor behavior for one spin projection and metal characteristics for the other, which have promising applications in spintronics. It is a great challengeable for HMFs to have wide spin energy gap, large saturation magnetization (MS), and high Curie temperature (TC) simultaneously. Here, we report the Sr1.5Mn0.5Fe0.5Hf1.5O6 (SMFHO) double perovskite compounds synthesized by solid‐state reaction and display a magnetic TC up to 804 K due to the strong Mn3+(↑)Fe3+(↑) spin interactions, which is the reported record in perovskite‐type HMFs so far. The measured MS value at 300 K was 4.87 μB/f.u., and it further increased up to 6.09 μB/f.u. at 2 K. The SMFHO powders exhibited butterfly‐shaped magnetoresistance (MR)–H curve at 2 K, and the MR (2 K, 7 T) value was measured as −3.86% due to the intergranular magnetic tunneling effect. Variation of the resistivity of the SMFHO ceramics versus temperature exhibits a semiconductor behavior, and the electrical transport properties of the SMFHO ceramics are well studied by Mott's range jump model, thermally activated semiconductor conductance model and small polaron jumping model, respectively. The optical absorption spectrum of the SMFHO powders demonstrates an indirect optical bandgap of 3.56 eV. Our present work demonstrates the intriguing properties of the SMFHO oxides where high TC, wide energy gap, and large MS value are preserved at the same time, which open the way to their promising applications in advanced spintronic devices at or beyond room temperature.

Large exchange bias enhancement and control of ferromagnetic energy landscape by solid-state hydrogen gating

Voltage control of exchange bias is desirable for spintronic device applications, however dynamic modulation of the unidirectional coupling energy in ferromagnet/antiferromagnet bilayers has not yet been achieved. Here we show that by solid-state hydrogen gating, perpendicular exchange bias can be enhanced by > 100% in a reversible and analog manner, in a simple Co/Co0.8Ni0.2O heterostructure at room temperature. We show that this phenomenon is an isothermal analog to conventional field-cooling and that sizable changes in average coupling energy can result from small changes in AFM grain rotatability. Using this method, we show that a bi-directionally stable ferromagnet can be made unidirectionally stable, with gate voltage alone. This work provides a means to dynamically reprogram exchange bias, with broad applicability in spintronics and neuromorphic computing, while simultaneously illuminating fundamental aspects of exchange bias in polycrystalline films.

Highly Energy-Efficient Spin Current Generation in SrIrO3 by Manipulating the Octahedral Rotation.

Materials with strong spin-orbit coupling (SOC) have been continuously attracting intensive attention due to their promising application in energy-efficient, high-density, and nonvolatile spintronic devices. Particularly, transition-metal perovskite oxides with strong SOC have been demonstrated to exhibit efficient charge-spin interconversion. In this study, we systematically investigated the impact of epitaxial strain on the spin-orbit torque (SOT) efficiency in the SrIrO3(SIO)/Ni81Fe19(Py) bilayer. The results reveal that the SOT efficiency is strongly related to the octahedral rotation around the in-plane axes of the single-crystal SIO. By modulating the epitaxial strain using different substrates, the SOT efficiency can be remarkably improved from 0.15 to 1.45. This 10-fold enhancement of SOT efficiency suggests that modulating the epitaxial strain is an efficient approach to control the SOT efficiency in complex oxide-based heterostructures. Our work may have the potential to advance the application of complex oxides in energy-efficient spintronic devices.

Growth, crystal structures, and magnetic properties of Fe–As films grown on GaAs (111)B substrates by molecular beam epitaxy

We study epitaxial growth, crystal structures, and magnetic properties of Fe–As compound thin films grown on GaAs (111)B substrates at various values of the As4:Fe flux ratio γ, using molecular beam epitaxy. The samples grown at low As4 flux (γ = 0.3, sample A) show mainly a body-centered-cubic (bcc) crystal structure, exhibiting ferromagnetic properties similar to bcc Fe. Meanwhile, the Fe–As samples grown at medium γ (2.7–4.5, sample group B) comprise regions of Ni2In-type FeAs (a hexagonal crystal with lattice constants of a = 0.399 nm and c = 0.536 nm), which are grown at the bottom and interface with the GaAs buffer layer, and a layer of non-stoichiometric FeAs with a DO3 structure (a = 0.522 nm) formed on the top. The DO3-structure FeAs phase contains partially transformed regions, which are characterized by thin stripes in a scanning transmission electron microscopy image. Furthermore, in the sample grown with high γ = 8.5 (sample C), a hexagonal Fe–As crystal with a large in-plane lattice constant (a = 0.691 nm and c = 0.542 nm) and threefold screw axes are observed. None of these crystal structures of Fe–As compounds has ever been reported. While sample C shows no ferromagnetism, the samples in group B exhibit strong ferromagnetism with high Curie temperature TC above 400 K. These new ferromagnetic Fe–As compounds are promising for spintronic device applications.