In this paper, we report on the structure and electrical properties of lead zirconate (PbZrO 3) thin films doped with barium (Ba 2+) and strontium (Sr 2+) deposited on platinum-buffered silicon substrates by a sol–gel method. Effects of Ba 2+ and Sr 2+ dopants on microstructure and electrical properties of the PbZrO 3 antiferroelectric thin films were investigated in details. X-ray diffraction patterns and scanning electron microscope micrographs illustrated that orientation and surface microstructure of these antiferroelectric films were dopant-dependent. The dielectric measurements showed that Sr 2+ doping stabilized the antiferroelectric phase, while Ba 2+ doping destabilized the antiferroelectric phase. It was also found that fatigue property of the antiferroelectric PbZrO 3 thin films was improved remarkably by the dopants.