Abstract
Conductive perovskite lanthanum nickelate LaNiO 3 (LNO) thin films were fabricated on SiO 2/Si substrates through metal-organic chemical liquid deposition method. The effect of annealing temperature on the orientation and sheet resistance of the LNO films were investigated. XRD patterns showed that the LNO films deposited on SiO 2/Si substrates exhibited preferred-(1 1 0) orientation. The lowest sheet resistance of the LNO thin films, 250 Ω/□ was obtained after being annealed at 650 °C for 1 h. Subsequently, Pb 0.97La 0.02(Zr 0.85Sn 0.13Ti 0.02)O 3 (PLZST) antiferroelectric thin films were prepared on the LaNiO 3 buffered SiO 2/Si substrates via sol–gel process. And the crystallinity, microstructure and electric properties of the PLZST thin films were studied in details.
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