Abstract
Lanthanum nickel oxide (LaNiO3: LNO) thin films were deposited on SiO2/Si(100) substrates by pulsed laser deposition under a high oxygen pressure of 50 Pa, and the effect of substrate temperature on the microstructure and electrical properties of the LNO films were studied by depositing the films at different temperatures. The results showed that the substrate temperature has a significant influence on the crystallinity, grain size, surface roughness and electrical resistivity of the LNO films, and the LNO films deposited at 650 °C show a low room-temperature resistivity of 420 μΩ cm. X-ray photoelectron spectroscopic analysis results revealed that the use of the high oxygen pressure in deposition process can avoid the oxygen loss in the films. The use of the LNO films as an electrode layer for the BaTiO3 and PbZr0.52Ti0.48O3 ferroelectric films was also confirmed, and the results indicate that the high-quality LNO films on Si substrates not only can be used as an electrode layer, but also as a seed layer to control the preferred orientation of ferroelectric films.
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