Abstract
Undoped and cerium (Ce)‐doped (1 and 5 mol%) antiferroelectric thin films were obtained by a sol–gel process. All lead zirconate, PbZrO3 (denoted as PZ), films crystallized in the perovskite phase with a full [111] pseudocubic orientation and with a uniform microstructure. X‐ray photoelectron spectroscopic investigations revealed that the oxidation state of Ce is 3+ leading to an A‐site donor doping. Ce doping causes a decrease in the dielectric constant from 200 to 155 and an increase in the forward switching fields from 275 to 296 kV/cm. However, it also leads to a significant decrease in the leakage current density and this effect is more pronounced for the 5% doping case, where an order of magnitude lower leakage current is obtained compared with the undoped PZ. Analyses of leakage current behavior indicate dominance of a space charge limited current type leakage current and also a possible contribution from a Poole–Frenkel type emission in certain temperature or field regimes.
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