Abstract
Chemical solution-derived anti-ferroelectric (AFE) thin films for energy storage devices were investigated. In order to evaluate dielectric properties(dielectric constant and loss, leakage current density), anti-ferroelectric properties(energy storage density and loss, energy storage efficiency) of anti-ferroelectric thin films with lanthanum (La) as a dopant, ∼1 μm-thick anti-ferroelectric (PbLa)ZrO3 (PLZO) films as a function of La doping concentration (0 ∼ 6 mol.%) were deposited on Pt/Ti/SiO2/Si substrate. With the increase of La-doping concentration, the energy storage loss was reduced from ∼8.8 J/cm3 to ∼6.6 J/cm3, and the efficiency was increased from ∼59.2% to ∼80.7%. In terms of the lowest leakage current density, the maximum energy storage performance was observed in La 2 mol.% doped PLZO thin film capacitor with the energy storage density ∼16.9 J/cm3, energy loss ∼8.4 J/cm3 and energy storage efficiency ∼66.8% at an applied electric field ∼1 MV/cm with frequency ∼1 kHz at room temperature.
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