Abstract
Undoped and Eu‐doped (1, 3 and 5 mol%) PbZrO3 (PZ) antiferroelectric (AFE) thin films have been deposited on Pt (111)/Ti/SiO2/Si substrates by a sol–gel method. The effect of Eu doping on phase transformation and energy storage performance of PZ thin films have been investigated in detail. It has been seen that on extent of Eu dopant the Curie temperature and electric field‐induced phase transformation can be altered. The energy storage properties have been found to be strongly dependent on Eu doping content. With the increase of Eu contents, recoverable energy storage density has been enhanced followed by their subsequent reduction. A maximum energy density (~18.8 J/cm3 at ~900 kV/cm) and minimum energy loss (~7.3 J/cm3) have been achieved on 3 mol% Eu‐doped PZ thin films.
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