Analysis Of Electrical Characteristics Research Articles

Dose-Dependent Performance of Boron-Implanted Self-Aligned Bottom-Gate IGZO TFTs

This work provides an interpretation of donor activation in self-aligned bottom-gate (SA-BG) Indium-Gallium-Zinc Oxide (IGZO) TFTs with ion-implantation of boron (11B+) species as the source/drain treatment. The effect of implant dose on device operation was investigated. Transfer characteristics appeared similar with a boron dose of 1 and 2×1015 cm-2 however, a 45% decrease in max current was observed for devices implanted with a 4×1015 cm-2 dose. Van der Pauw measurements displayed a similar trend; an increase in boron dose resulted in an increase in sheet resistance. A left-shift in transfer characteristics was observed with a greater shift in the 4×1015 cm-2 dose devices, following thermal stability treatments. The existence of two separate boron species is hypothesized, (1) an electrically active donor species involving a relatively small fraction of the total boron concentration and (2) additional boron interstitials and/or other associated defects. A detailed discussion on developed arguments arrived at through analysis of TFT electrical characteristics is presented.

InGaN/GaN Hybrid‐Nanostructure Light Emitting Diodes with Emission Wavelength Green and Beyond

Three sets of InGaN/GaN nanowire (NW) heterostructures are grown on Si(111) substrates under different growth conditions. A quasi‐two‐dimensional p‐GaN layer is grown on top of those structures using the epitaxial lateral overgrowth (ELOG) technique. Finally, the light‐emitting diodes (LED) are fabricated using these hybrid nanostructures following standard fabrication techniques. Electroluminescence (EL) measurement confirmed the emission wavelengths of 530.0 nm (green), 608.3 nm (orange), and 632.5 nm (red). The knee voltages of the devices are estimated to be in the range of 2.18–2.89 V, with higher knee voltages for samples emitting lower wavelengths. Further analysis of forward bias electrical characteristics suggests the dominance of tunneling current and an increase in the defect density in the heterostructures emitting higher wavelengths.

Analysis of Electric Breakup Characteristics of Emulsion Droplets Based on Dissipative Particle Dynamics Method

Crude oil desalination and dehydration are necessary for storage, transportation, and processing procedures. However, the behaviour of fine emulsion droplets under an electric field has always been questioned. This paper modified the dissipative particle dynamics method (DPD) to study the deformation process of fine emulsion droplets under a high-strength electric field. Compared with the literature data, the reliability of the DPD method is confirmed. The influence of the crude oil properties and the electric field characteristics on the behaviour of the emulsion droplet was analysed, and the effect factors included electric field intensity, electric field frequency, emulsion droplet size, centre distance ratio, conservative force intensity, dissipative strength, and crude oil density. The relationship between critical electric field intensity and emulsion droplet deformation was formulated based on the simulational dates.

6‐1: Pragmatic low‐temperature polycrystalline thin‐film transistor technologies for high‐brightness and high‐temperature environments in AMOLED displays

This paper presents experimental and theoretical analysis of electrical characteristics for recent process‐based low‐temperature polysilicon (LTPS) thin‐film transistors (TFTs) in AMOED displays, focusing on high‐temperature and high‐luminance device characteristics. All off‐state current (Ioff) components in such conditions, which include gate‐induced drain leakage (GIDL), thermal generation, photo generation currents, are in detail analyzed. Exploring the effects of process technologies and device design in small‐size TFTs, in conjunction of reduced defect density‐of‐state (DOS) in the polycrystalline and its interface of gate oxide, we investigate optimal device and process design for reliable polycrystalline thin‐film transistor technologies in high‐brightness and high‐temperature situations. Numerical device simulations, supplemented by physics‐based analysis, confirm experimental results for our optimized device/process and gain diligent process/ design co‐optimization insights.

Analysis of electrical contact characteristics of strap contacts used in high voltage bushings under eccentric conditions

AbstractThe contact finger electrical connection structure is a crucial component of high voltage bushings, and its safety and reliability directly impact the operational stability of the bushing. To investigate electrical contact performance of the contact finger under eccentric conditions, a three‐dimensional electrical, thermal, and force multi‐physics coupling calculation model was established. Additionally, a test platform was constructed to measure electrical contact characteristics of the contact finger. The contact characteristics of the contact finger when the male head was axially deflected and radially offset compared to the female head were obtained. The research findings indicate when the male head deflects axially, the contact force changes of the contact finger blades on both sides are opposite. Moreover, as the axial deflection angle of the male head increases, the resistance of the electrical connection structure shows a rising‐slow decreasing‐fluctuating trend. The resistance is highest at 3°, with a resistance increase rate of 7.35%. Furthermore, the resistance of the electrical connection structure varies with the radial offset of the male head, following a power function. Contact failure occurs when the radial offset is 1.31 mm, and the resistance increase rate reaches 24.9% at a radial offset of 1.58 mm.

Deep Learning Approach for Electrical Characteristics Analysis of 3D Vertical SONOS NAND FLASH by Grain Boundary Distribution and Geometrical Variation

Deep Learning Approach for Electrical Characteristics Analysis of 3D Vertical SONOS NAND FLASH by Grain Boundary Distribution and Geometrical Variation

Photodetector array for measuring the spatial–temporal distribution characteristics of electric field in oil–pressboard insulation based on the Kerr electro‐optic effect

AbstractAccurate measurement and effective analysis of the space electric field and charge characteristics within the oil–pressboard insulation structure of converter transformer are essential for achieving precise insulation structure design. Presently, most electric field measurement methods relying on the Kerr electro‐optical effect are limited to single‐point measurements. Given the complexity of converter transformer insulation structures, including their large scale and the use of various materials, existing technologies and findings struggle to provide comprehensive electric field observations within the oil–pressboard region. After leveraging the Kerr electro‐optic effect, a high‐precision 32‐unit photodetector array has been developed to achieve regional measurements of spatial‐temporal electric field in oil–pressboard insulation. The array boasts a measurement spatial resolution of 1.4 mm2 and a sensitivity of 0.15 kV/mm, ensuring measurement accuracy exceeding 96.50%. Through practical measurements of the spatial electric field distribution within the oil–pressboard insulation under direct current voltage, the non‐uniform distribution of the electric field is effectively captured in oil. Notably, the maximum deviation in field strength at different positions within the transformer oil can reach 18.5%. Moreover, as the applied voltage increases, the unevenness coefficient of the field strength gradually rises, peaking at 1.19, which signifies a progressive expansion in the area affected by electric field distortion. By conducting tests to assess the dispersion of volume resistivity in samples from various positions within large sheets of pressboard, the variation in volume resistivity of materials is posited as one of the contributing factors to the non‐uniform distribution of electric field within the oil. The detailed accomplishments aim to provide essential technical and theoretical support for optimising insulation structure design of converter transformers.

Disk flower-like structure of PANI Modulated electronic transport dynamics of Sr[formula omitted] ferrite

This study conducted a comprehensive analysis of the low frequency-based electrical characteristics of ferrite composites, exploring the influence of morphology on tunning and optimizing dielectric and conductivity relaxation. Specifically, composites of PANI: Sr CoxZnxFe12−2xO19 in 1:4 ratio by weight, with varying levels of substitution x = 0.0, 0.4, 0.8, 1.2, 1.6, and 2.0 were synthesized using the physical blending method. X-ray diffraction analysis of composites shows the existence of M-type hexagonal and PANI particles, along with some secondary phases in all synthesized samples. The morphology of composites revealed disk flower-like and hexagonal platelet-type structures of PANI and hexagonal ferrite, respectively. Substituting Co–Zn ions induced a non-linear increase in grain size from 0.781 to 1.566 μm, calculated using ImageJ software. The dielectric and electrical properties of composites were examined over the frequency range of 20 Hz to 2 MHz. The replacement of Fe ions with Co–Zn ions resulted in a non-linear variation in conductivity and is maximum for FP3 (1.33 × 10−2 Ω−1m−1) at 2 MHz. The complex impedance spectra deviated from an ideal Debye type and were modeled using an equivalent circuit encompassing resistances of grain boundaries and grains, grain capacitance, and a constant phase element. Modulus and impedance spectra analysis illustrated the contribution of both grain and grain boundaries in their respective relaxations. The simulation of impedance parameters in EIS software elucidated a substantial value of Cg = 290 μF for FP1, which aligned with the large-sized grain observed in FESEM micrographs.

Analysis of electrical and hysteresis characteristics of flexible OTFT using solution-processable DPP-DTT polymer and Parylene-C

Organic thin-film transistors (OTFTs) fabricated on Parylene-C substrates have the advantages of a simple process, low cost, and flexible characteristics. This study introduces the manufacturing method and electrical characteristics of an OTFT using organic materials as the substrate, gate dielectric, and channel material. PDPP2T-TT-OD(DPP-DTT) is used as the channel material, which is a highly mobile p-type polymer with good air stability. The proposed OTFT device has flexible characteristics because it is fabricated on a Parylene-C substrate and can be used even in a curved state. Furthermore, the manufacturing process was largely achieved via a simple, low-cost solution process using spin-coating and photolithography with a photo-curable material. Under flat conditions, the threshold voltage (VTH) is approximately –3 V, the average ION/IOFF ratio is approximately 105, and the mobility is 0.84 cm2/Vs.

Analysis of Electrical Characteristics due to Deep Level Defects in 4H-SiC PiN Diodes

Analysis of Electrical Characteristics due to Deep Level Defects in 4H-SiC PiN Diodes

Analysis of electrical characteristics of commercial led flat panel lights during dimming process

Analysis of electrical characteristics of commercial led flat panel lights during dimming process

Broadband photodetector based on Co3O4/ZnO/Si double heterojunctions: A morphological and optoelectronic study

The growing demand for efficient and cost-effective optoelectronic devices has motivated extensive research into advanced photodetector architectures. This work realizes a robust platform for broadband photodetection via architectural engineering of Co3O4/ZnO/Si double heterojunctions using facile chemical spray pyrolysis. Comprehensive materials and device characterization provides fundamental insights into the role of tailored morphology, band alignment engineering, and defect landscape in dictating device behavior. Aligned ZnO nanorods and fine-grained Co3O4 layers enable efficient light harvesting and charge transport. A triple bandgap structure stemming from the synergistic combination of the two oxides facilitates broadband spectral response from 400 to 1000 nm. Based on the optical properties, triple energy bandgap ranges have been observed, ZnO exhibits an energy bandgap ranging from 2.35 eV to 3.15 eV, while Co3O4 shows energy bandgaps in the range of 1.85 eV–2.23 eV and 1.35 eV–1.5 eV. The responsivity measurements show that Co3O4/ZnO/Si double-heterojunction device has the highest responsivity over a wide range, with distinct peaks at 480 nm and 950 nm, reaching values of 3.5 A/W and 4.5 A/W, respectively. Analysis of electrical transport characteristics and energy band diagrams elucidates the photogenerated carrier dynamics and photocurrent generation governed by strategic heterointerfaces. These fundamental insights into nanoscale interface and architecture engineering lay the foundation for custom-designing high performance metal oxide heterojunction photodetectors through facile and scalable spray pyrolysis technique.

Electrical Characteristics Analysis and Quantum Dynamics Simulation of Oil-Immersed Pressboard Modified by SiO2 under Electrothermal Accelerated Aging Conditions

Electrical Characteristics Analysis and Quantum Dynamics Simulation of Oil-Immersed Pressboard Modified by SiO₂ under Electrothermal Accelerated Aging Conditions

High Sensitivity of Dielectrically Modulated Tunnel Field Effect Transistor for Biosensor Applications.

The Dielectrically Modulated Full Gate Tunnel Field Effect Transistor (FET) with dual nanocavities, as described in the paper, is a novel device designed as a label-free biosensor for detecting cancer cell biomolecules. This biosensor utilizes the principles of field-effect transistors and incorporates nanocavities to enhance the detection sensitivity. The simulations are conducted using the Silvaco Atlas model, which allowed for the analysis of the device's electrical characteristics in the presence of various cancer cell biomolecules. The performance of the proposed device is evaluated using several sensing metrics, including current, threshold voltage, and subthreshold slope. These metrics are examined to assess their sensitivity to the presence of different cancer cell biomolecules. By analyzing these electrical characteristics, we can able to determine the device's ability to detect and differentiate between specific biomolecules associated with cancer cells. One important aspect discussed in the paper is the incorporation of nanocavities in the device design. These nanocavities have a significant impact on enhancing the sensing capabilities of the biosensor. The paper also introduces the concept of the filling factor parameter, which describes the fraction of the nanocavity volume occupied by the cancer cell biomolecules. This parameter plays a crucial role in achieving optimal sensing performance. Overall, the paper presents a comprehensive analysis of the proposed Dielectrically Modulated Full gate Tunnel FET embedded with dual nanocavities as a label-free biosensor for cancer cell biomolecules. The simulations conducted using the Silvaco Atlas model provide valuable insights into the device's electrical characteristics and its sensitivity to different biomolecules. The study emphasizes the significance of nanocavities and their filling factor parameter in achieving enhanced sensing performance for cancer cell detection.

Ammonia Nitrogen Removal by Gas–Liquid Discharge Plasma: Investigating the Voltage Effect and Plasma Action Mechanisms

Atmospheric pressure gas–liquid discharge plasma has garnered considerable attention for its efficacy in wastewater contaminant removal. This study utilized atmospheric oxygen gas–liquid discharge plasma for the treatment of ammonia nitrogen wastewater. The effect of applied voltage on the treatment of ammonia nitrogen wastewater by gas–liquid discharge plasma was discussed, and the potential reaction mechanism was elucidated. As the applied voltage increased from 9 kV to 17 kV, the ammonia nitrogen removal efficiency rose from 49.45% to 99.04%, with an N2 selectivity of 87.72%. The mechanism of ammonia nitrogen degradation by gas–liquid discharge plasma under different applied voltages was deduced through electrical characteristic analysis, emission spectrum diagnosis, and further measurement of the concentration of active species in the gas–liquid two-phase system. The degradation of ammonia nitrogen by gas–liquid discharge plasma primarily relies on the generation of active species in the liquid phase after plasma–gas interactions, rather than direct plasma effects. Increasing the applied voltage leads to changes in discharge morphology, higher energy input, elevated electron excitation temperatures, enhanced collisions, a decrease in plasma electron density, and an increase in rotational temperatures. The change in the plasma state enhances the gas–liquid transfer process and increases the concentration of H2O2, O3, and, ⋅OH in the liquid phase. Ultimately, the efficient removal of ammonia nitrogen from wastewater is achieved.

Revaluation Method of Sensor Power Supply

This study proposes an approach for wireless sensor power supply voltage early warning using statistical models. Experimental and statistical analysis of electrical parameters and battery discharge characteristics were conducted to establish a reliable evaluation process. A linear regression model was employed to analyze and fit known temperature and voltage data, establishing a relationship model between voltage and temperature and using it to predict unknown voltage threshold data. This solves the problem of the inability to real-time predict the warning voltage threshold of wireless sensors as the actual working temperature changes and ensures their reliability. The results of experiments and statistical analysis demonstrate the effectiveness and accuracy of this method. Compared to the traditional method of using fixed voltage thresholds for warning, the proposed method offers a practical solution that can timely address the issue of low power supply voltage in wireless sensor networks.

Effect of Ce infusion on the structural, dielectric, optical, transport and polarization behavior of Nd-modified triple-layered Aurivillius phase ceramic Bi3NdTi3O12

Herein, the effect of cerium substitution on the structural, dielectric, optical, impedance and leakage current characteristics of Nd modified triple layered Aurivillius phase compound of chemical composition Bi3NdTi3-xCexO12 is investigated. The polycrystalline samples are synthesized via ceramic fabrication technology. Room temperature X-ray analysis confirms their orthorhombic symmetry. Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS) analysis affirm microstructure and elemental composition of the compounds. The temperature-dependent dielectric study indicates diffused phase transition (DPT) behavior possibly induced by compositional fluctuations and random occupancy of equivalent crystallographic sites. Signature peaks pertaining to metal-oxide bond vibrations are also identified by FTIR study. Impedance spectroscopic study unravels negative temperature coefficient of resistance (NTCR) and non-Debye type relaxation in the samples. UV–Visible spectroscopy reveals a reduction in band-gap from 3.1 eV to 2.83 eV with cerium infusion from x = 0 to x = 0.3. It is due to the introduction of localized mid-gap states thus, suggesting the possibility of photovoltaic applications. Further analysis of electric modulus and impedance characteristics propounds prominent short-range carrier hopping with higher cerium percentage. The room temperature I–V study suggests an increase in the voltage-dependent non-linearity with cerium incorporation. Leakage current analysis reveals a transition from Ohmic to space charge limited conduction (SCLC) type behavior with high electric field. Room temperature polarization study confirms their ferroelectric property. Frequency dependent ac conductivity obeys Jonscher double power law clearly indicating the presence of two dispersive regions dominated by grain and grain boundary effects. Reduced bandgap, enhanced voltage dependent non-linearity, NTCR type property and saturated P-E loops observed in the sample unravel the multifunctional aspects of the fabricated compound.

Design and Analysis of Electrical Characteristics of 14nm SOI-based Trigate Gaussian Channel Junctionless FinFET

Planar MOSFETs are reaching their physical limits. To overcome the limitations and improve channel gate control, FinFET technology, which uses many gate devices, is a superior choice while lowering the size of planar MOSFETs even further. In this paper, 14nm Silicon-On-Insulator-based Trigate Gaussian Channel Junctionless FinFET is presented. The gate length of 14nm is considered along with an Equivalent Oxide Thickness of 1nm, 5nm as fin width, and the work function of the gate metal is 4.75eV. The device architecture has a non-uniform doping profile (Gaussian distribution) across the fin’s thickness. It is devised to address the effects of Random Dopant Fluctuations such as channel mobility degradation in Junctionless FinFET based devices. The impact of fin height (Fh), gate dielectric and spacer dielectric on the Drain Induced Barrier Lowering, Subthreshold Swing, drain current of GC-JLFinFET is analyzed. The results show that the Ion=101.5μA/μm and Ion/Ioff is 3.2×107 are obtained for the proposed device structure compared to the existing structure, which has Ion/Ioff of 1.1x107. Furthermore, the proposed design shows better efficiency in short channel characteristics, namely DIBL=25.3 mV/V, Subthreshold Swing=63.88 mV/dec and Transconductance =3.621×105 S/μm. Thus the Gaussian Channel-based FinFET architecture can provide optimum results for Junctionless-based FinFET devices.

Inclusion of Biological Targets in the Analysis of Electrical Characteristics of Non-Thermal Plasma Discharge

In Plasma Medicine studies, the effect of non-thermal plasma (NTP) on biological targets is typically correlated with the amount of stable reactive oxygen and nitrogen species produced in a liquid medium. The effect of NTP and the response of the biological target on cellular redox mechanisms is overlooked in these investigations. Additionally, the influence of electrical properties of cells on the physical properties of NTP is neglected. Therefore, we used a floating electrode dielectric barrier discharge plasma to explore the impact of cell structure, size, and viability of the biological target on the physical properties of NTP. Lissajous figures were used to determine circuit capacitance and energy per cycle during NTP exposure of different cell suspensions. We show that both, structural integrity and active enzymic processes of cells change the electrical properties of NTP. Correlations were also drawn between NTP-produced hydrogen peroxide and nitrite with measured capacitance. Our studies indicate that the observed changes between different cell suspensions may be due to a feedback loop between the biological target and the NTP source. In future studies, a more detailed analysis is needed to improve the control of clinical NTP devices.

Simulation analysis of electrical characteristics of P-gate enhanced HEMT with C-doped buffer layer

The C-doped P-gate-enhanced HEMT (PEHEMT) is simulated by using the Silvaco T-CAD tool. The interaction among the C acceptor trap, electron, and hole in the buffer layer at different voltages promotes interesting electrical characteristic within the device. In off-state conditions, the peak electric field position shifts from the edge of gate to the edge of drain. During the process of peak electric field transfer, the gate electric field gradually saturates, and the increase rate of peak electric field shows a turning point at 350 V (Vd < 600 V). As the voltage further increases (Vd > 600 V), the increase rate of the drain electric field gradually slows down and tends to saturation, and the corresponding saturated gate electric field begins to increase. The uniform, quasi-linear, and step distributions of three different C acceptor in the buffer layer exhibit different degrees of current collapse under 1 ms bias stress, with values of 21.8%, 12.7%, and 12.8%, respectively. In this work, we have provided appropriate explanations for the above phenomena.