Pressure Chemical Vapor Deposition Research Articles

Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition

AlInN has emerged as a promising material for advanced optoelectronic and electronic devices due to its unique properties. However, achieving AlInN layers with excellent surface morphology remains challenging. Here, Al0.83In0.17N layers lattice-matched to GaN/sapphire were grown by atmospheric-pressure metalorganic chemical vapor deposition at 875 °C. The lowest surface roughness measured by atomic force microscopy was 0.37 nm after optimizing the growth temperature and flux of precursors. The roughness value was constant in the range of 15–72 nm film thickness. Introducing a TMI pre-flow period before AlInN growth, further reduced roughness to 0.28 nm, although a graded inclusion of Ga into the AlInN near the GaN/AlInN interface was observed. This improved surface morphology was interpreted by the In-surfactant effect enriched by the pre-flow in the early stage of AlInN. Additionally, the V-pits density was as low as 2×105 cm−2, primarily due to high growth pressure and also influenced by relatively high growth temperature. Analysis of Al incorporation using second-order reaction model suggests that the severe parasitic reactions between TMA and NH3 at atmospheric pressure can be effectively eliminated by a high total gas flow rate of 72 slm, ensuring in-plane uniformity in surface morphology and relatively good crystalline quality.

Mixed phase iron oxides thin layers by atmospheric-pressure chemical vapor deposition method

This paper provides a simple method for producing a metal oxide thin layer methodology by atmospheric pressure chemical vapor deposition (APCVD) synthesis over stainless steel substrates. This methodology enables the formation of thin iron oxide layers at its performance at various temperatures of 330 °C, 430 °C, and 530 °C. The deposition arises from thermal decomposition of the iron organometallic precursor Fe3(CO)12, forming a thin layer of iron oxide is, by the ozone present in the reaction chamber promoting the deposition of the iron oxide particles over the substrate. The Raman characterization suggest that at 330 °C, a mixture of hematite and magnetite is predominant on the as deposited substrates, also hematite modes show to be more pronounced as the band at 300 cm-1 narrows. Conversely, magnetite is prominent at higher synthesis temperatures, exhibiting a more intense Eg5 mode at 680 cm-1. The particles exhibit a uniform morphology, with both metal oxide phases coexisting. The average diameter of the particles is 50 nanometers as scanning electronic microscopy shows in a transversal sample section.•The formation of particles is attributed to the combination of iron ions +2 and +3 in the deposition process and their interaction with oxygen in the given synthesis parameters at atmospheric pressure chemical vapor deposition (APCVD).

Oxygen-doped FeP on Ti Foil with Ti3O Interlayer for Efficient and Durable Electrolysis.

Thedevelopment of electrocatalysts withlow cost, high efficiency, and long-term durability is crucial for advancing green hydrogen production.Transition metal phosphides (TMPs) have been proved to be efficient electrocatalyst, while the improvement in the performance and durability of the TMPs remains a big challenge.Employing atmospheric pressure chemical vapor deposition (APCVD) and phosphorization, FeP/Ti electrodes are fabricated featuring controllable oxygen ingredients (O-FeP/Ti). This manipulation of oxygen content fine-tunes the electronic structure of the catalyst, resulting in improved surface reaction kinetics and catalytic activity.The optimized O-FeP-400/Ti exhibits outstanding HER activity with overpotentials of 142 and 159 mV at -10 mA cm-2in 0.5 M H2SO4and 1 M KOH, respectively.Notably, the obtained O-FeP/Ti cathode also displays remarkable durability of up to 200 h in acidic electrolyte withsurface topographyremaining intact.For the first time, the low-valence titanium oxide (Ti3O) interlayeris identified in the composite electrode and ascribed for the superior connection between Ti substrate and the surface O-FeP catalyst, as supported by experimental resultsand density functional theory (DFT) analysis.This work has expanded the potential applicationsof transition metal phosphides (TMPs) as a cost-effective, highly efficient and durable catalyst for water splitting.

High-Yield WS2 Synthesis through Sulfurization in Custom-Modified Atmospheric Pressure Chemical Vapor Deposition Reactor, Paving the Way for Selective NH3 Vapor Detection.

Nanostructured transition metal dichalcogenides have garnered significant research interest for physical and chemical sensing applications due to their unique crystal structure and large effective surface area. However, the high-yield synthesis of these materials on different substrates and in nanostructured films remains a challenge that hinders their real-world applications. In this work, we demonstrate the synthesis of two-dimensional (2D) tungsten disulfide (WS2) sheets on a hundred-milligram scale by sulfurization of tungsten trioxide (WO3) powder in an atmospheric pressure chemical vapor deposition reactor. The as-synthesized WS2 powders can be formulated into inks and deposited on a broad range of substrates using techniques like screen or inkjet printing, spin-coating, drop-casting, or airbrushing. Structural, morphological, and chemical composition analysis confirm the successful synthesis of edge-enriched WS2 sheets. The sensing performance of the WS2 films prepared with the synthesized 2D material was evaluated for ammonia (NH3) detection at different operating temperatures. The results reveal exceptional gas sensing responses, with the sensors showing a 100% response toward 5 ppm of NH3 at 150 °C. The sensor detection limit was experimentally verified to be below 1 ppm of NH3 at 150 °C. Selectivity tests demonstrated the high selectivity of the edge-enriched WS2 films toward NH3 in the presence of interfering gases like CO, benzene, H2, and NO2. Furthermore, the sensors displayed remarkable stability against high levels of humidity, with only a slight decrease in response from 100% in dry air to 93% in humid environments. Density functional theory and Bayesian optimization simulations were performed, and the theoretical results agree with the experimental findings, revealing that the interaction between gas molecules and WS2 is primarily based on physisorption.

Synthesis and Characterization of Graphene on Copper Foil via Atmospheric Pressure Chemical Vapor Deposition Method and its Impact on Electrical Properties

Copper, prized for its exceptional electrical conductivity, thermal conductivity, and mechanical strength, is a staple in electronic applications. The ongoing quest for enhanced performance in miniaturized technologies has led to exploring copper-graphene composites, particularly those integrating bilayer graphene (BLG). This study investigates the enhancement of electrical conductivity in copper through the incorporation of BLG via atmospheric pressure chemical vapor deposition (APCVD). The research highlights the APCVD method's ability to grow high-quality BLG on high-purity oxygen-free copper foil, demonstrating significant improvements in electrical properties. Detailed characterization reveal that the graphene growth process induces structural changes in the copper, promoting ideal crystallographic orientations and larger grain sizes. This process achieves nearly complete graphene coverage and results in a copper/graphene (Cu/GR) composite with minimal defects. The electrical conductivity of the Cu/GR composite significantly increased to 59.32 × 10⁶ S·m⁻1, a 7.83% improvement over the pristine copper foil. This enhancement is attributed to the increased carrier density and mobility within the composite. These advancements suggest the potential of APCVD-grown graphene for various high-performance electronic applications, providing a promising pathway for further development and optimization of graphene-copper composites.

Water assisted atmospheric CVD super growth of vertically aligned CNT forest for supercapacitor application

We report a high growth rate (37 μm/min) synthesis of vertically aligned carbon nanotube (VACNT) forest, achieving remarkable height exceeding a millimetre with good crystallinity. VACNTs with few numbers of walls have been grown over Fe–Co/Al2O3/SiO2 coated Si wafer using the water assisted atmospheric pressure chemical vapour deposition (WACVD) method. The key to this success lies in the synergistic combination of a bimetallic catalyst (Fe-Co) with buffer Al2O3 layer and the WACVD method. Notably, the VACNT forest, synthesised at optimized conditions can be directly used without the need for additional post-growth purification processes, eliminating the risk of potential damage to the CNTs. Finally, the VACNT forest exhibits excellent areal capacitance of 133.33 mF/cm2 at a current density of 1 mA/cm2 with outstanding cyclic stability of 130 % @ 3000 cycles.

In Situ transmission Electron Microscope Observation of Biased-Induced Dynamic Evolution of Two-Dimensional CrS2

Two-Dimensional transition-metal dichalcogenides (2D-TMDs) have attracted great attention recently owing to their potential to become the important material for next generation semiconductor devices. While using the device, it needs to ensure high density current and biased voltage for a long time. However, the study on TMDs in high-energy environment is insufficient. In this work, the phase evolution of CrS2 are revealed via in-situ biasing experiments and recorded by transmission electron microscope (TEM) at atomic scale. The ultra-thin layered (~1.6nm) CrS2 was synthesized through atmospheric pressure chemical vapor deposition (APCVD), followed by transferring the as-grown samples onto specialized TEM electrical chips. The TEM characterization of CrS2 initial sample provided the basic understanding of this Cr-based TMD, identified as pure 1T phase with single crystal structure as shown in Figure 1. The advanced in situ technique was employed to record the structural evolution and was tested the endurance of CrS2 during biasing. Moreover, the results can make significant contributions to future semiconductor device designs and demonstrate CrS2 has great potential as a semiconductor device with its outstanding characteristic of biased-endurance. Figure1. (a) Low-magnification TEM image of 1T-CrS2. (b) High-resolution TEM image of 1T-CrS2, corresponding with FFT along [001] zone axis. (c) AFM image of the as-grown CrS2 sample, blue bar in the image is X axis of (d). (d) AFM height profile of as-grown 1T-CrS2 with average thickness of~1.6nm. (e) STEM image of 1T-CrS2 and shows d-spacing~0.336 nm. (f) Low-magnification TEM image of the device, showing that the transferred CrS2 layer was suspended on the membrane with Au electrodes on both sides. (g,h) In-situ TEM observation of the biasing experiment after 5V biasing for 5 min of 1T-CrS2. Time-sequencing TEM images showing the structural evolution of biasing. The inset shows the corresponding FFT-DP to reveal the variation of crystallinity of the sample. (g) Initial structure of 1T-CrS2. (h) 1T-CrS2 under in-situ biasing experiment after 10 minutes. Figure 1

Direct Growth Graphene Via Atmospheric Pressure Chemical Vapour Deposition

The integration of graphene in field-effect transistor (FET) has aroused tremendous attention in the field of sensor technology, particularly for electronic biosensors. However, transferring graphene from metal substrates has destructive effects on the electrical characteristics of the graphene film, leading to severe impurities and defects. Here, we investigated a new approach of technique to synthesis direct- growth semiconducting graphene via atmospheric pressure chemical vapour deposition (APCVD) method. In this study we observe the effects of different reaction times, carbon concentrations and temperatures on the carbon arrangement in graphene. The synthesised graphene was characterised by Raman spectroscopy and field emission scanning electron microscopy (FESEM) to observe the quality of graphene formation. From the Raman analysis, the I2D/IG ratio < 1 indicates the formation of graphene in multiple layers. The ID /IG ratio < 1 was also observed, indicating that the graphene has less disorder of defects. Based on the electrical measurement of the material at estimated distance of 250 μm, a higher I2D/IG ratio leads to a higher resistance. Full width at half maximum (FWHM) of 2D band shows graphene with the highest I2D/IG ratio has the lowest value of FWHM. As the conclusion, these directly grown semiconducting graphene layers can be efficiently integrated into biosensors without any complex post-treatment process.

Vanadium pentoxide nanowires preparation via kinetic control of vanadium oxytrichloride catalytic oxidation with APCVD

Vanadium pentoxide nanowires were successfully fabricated using vanadium oxytrichloride oxidation with copper oxide nanoparticles serving as catalysts via atmospheric pressure chemical vapor deposition. Kinetic parameters such as temperature and flow velocity were proved to play important roles in the morphologic control of as-deposited product. Vanadium pentoxide nanowires with an average length of ∼10 μm and a diameter of 50–100 nm, were obtained under the optimum conditions. A root growth mechanism of nanowires was proposed that precursor was readily captured by catalyst nanoparticles at the beginning of deposition, forming nucleation sites. Subsequently, the anisotropic growth of vanadium pentoxide is primarily governed by energy minimization under the reaction rate limited conditions. The presence of oxygen vacancies in the nanowires was confirmed by Raman, XPS and photoluminescence characterization, indicating promising applications in functional materials manufacture. The novel route for preparing vanadium pentoxide nanowires provides an alternative pathway for transitioning traditional vanadium industry towards advanced functional materials development.

Experimental characterization and crystal plasticity finite element simulation of the microstructural evolution in CVD tungsten during multi-step rolling

Atmospheric pressure chemical vapor deposition (CVD) is a promising technique for the preparation of tungsten products with high purity, high density and almost unlimited thickness. The tungsten prepared by using the CVD method (CVD-W) usually has a columnar coarse grain microstructure with strong preferred orientations. Multi-step rolling at gradually decreased operating temperatures is an effective method to lower the ductile-to-brittle transition temperature in pure tungsten. So far, the microstructural evolutions of CVD-W during the multi-step rolling processing is still unclear. In this study, the microstructure evolution and texture development of CVD-W during multi-step rolling are investigated by the coupling of electron backscattering diffraction technique and full-field crystal plasticity finite element simulations. After multi-step rolling, the sample exhibits through-thickness texture gradient. A layered structure with elongated 〈100〉 // ND and 〈111〉 // ND grains is observed in the central region and Goss orientation mainly appears in the surface region. Crystal plasticity finite element simulations show that {001}〈110〉 is a stable orientation under the plane strain compression, which is realized by the rotation of {100} grains around ND. Meanwhile, the shear flow promotes the rotation of {100} grains around TD, leading to the formation of 〈111〉 // ND orientation. 〈110〉 // ND orientation is observed near the shear bands, which is generated through the rotation of {100} grains around <100> // RD axis. The rolled CVD-W exhibits crystallographic orientation dependent recrystallization behavior, which is related to the orientation dependent distortion energy generated in the rolling processing. Our studies provide fundamental insights into the microstructure evolution and texture development of CVD-W under the multi-step rolling processing.

The GeSe/SnSe heterojunction photodetector with self-powered characteristics and high infrared response performance

We present a GeSe/SnSe van der Waals heterojunction fabricated using the wet transfer technique. GeSe and SnSe were synthesized via a low-temperature and atmospheric-pressure chemical vapor deposition method. The GeSe/SnSe heterostructure photodetector demonstrates remarkable rectification characteristics, boasting a rectification ratio of 102, along with an exceptionally low dark current, indicating minimal power consumption. Furthermore, it exhibits a broad optical response, spanning from the visible spectrum (450 nm) to the near-infrared (1064 nm). Under 808 nm laser illumination and reverse bias, the device achieves a responsivity of 19.82 A/W, a detectivity of 4.74 × 109 Jones, and an external quantum efficiency of 3048.32%. Notably, the GeSe/SnSe heterojunction photodetector also exhibits self-powered characteristics, with a responsivity of 0.11 mA/W and a detectivity of 5.44 × 106 Jones at zero bias voltage, accompanied by a fast response time of 23/61 ms (rise/fall). These findings underscore the effectiveness of the GeSe/SnSe heterojunction as a strategy for near-infrared photodetectors to simultaneously achieve low power consumption, high photoresponsivity, and self-powered photodetection, which is promising for optoelectronic device applications.

Two-dimensional GeS synthesized by one-step space-confined APCVD and its self-powered photodetector

Germanium sulfide (GeS) is a notable two-dimensional (2D) layered material that has gained attention across various research domains. However, challenges remain in realizing large areas of high-quality 2D GeS, despite the efforts made. Recently, we have successfully synthesized rectangular 2D single-crystal GeS flakes with a thickness of about 52 nm and a lateral length of 100 μm by one-step space-confined atmospheric pressure chemical vapor deposition (APCVD) using sulfur and germanium powders as raw materials. There is a direct relationship between the area size and the growth time. The further prepared GeS device has good photoresponsivity in the visible range. At 532 nm, it includes a responsivity of 40 mA/W, a detectivity of 8 × 108 Jones and a fast response time of 199 ms. In addition, the GeS device exhibits p-type conductive behavior and a unique self-powered effect. After prolonged storage, the GeS photodetector still exhibits good and stable photoswitching characteristics.

Facet-Dependent Interfacial Charge Transfer between T-Phase VS2 Nanoflakes and Rutile TiO2 Single Crystals.

The hybridizations of two-dimensional (2D) metallic materials with semiconducting transition metal oxides (TMOs) register attractive heterojunctions, which can find various applications in photostimulated circumstances. In this work, we developed an ambient-pressure chemical vapor deposition method to directly grow T-VS2 on atomically smooth rutile TiO2 single crystals with different terminations and thus successfully constructed a heterojunction model of VS2/TiO2 with a well-defined clean interface. Detailed measurements with Kelvin probe force microscopy revealed the facet-dependent charge transfer occurring at the VS2/TiO2 interfaces, seeing variations not only in the amount and direction of the transferred electrons but also in the photoinduced surface potential changes and the dynamics of photogenerated charge carriers under ultraviolet irradiation. Interestingly, ultrathin T-VS2 was found with considerable magnetism at room temperature, disregarding the charge exchange with the TiO2 substrates. These results may bring deep insights into the photoinspired functionalities of the hybridized system combining metallic transition metal dichalcogenides and TMO materials.

Synthesis and Characterization of SiO2-Based Graphene Nanoballs Using Copper-Vapor-Assisted APCVD for Thermoelectric Application.

This study describes a method by which to synthesize SiO2-based graphene nanoballs (SGB) using atmospheric pressure chemical vapor deposition (APCVD) with copper vapor assistance. This method should solve the contamination, damage, and high costs associated with silica-based indirect graphene synthesis. The SGB was synthesized using APCVD, which was optimized using the Taguchi method. Multiple synthesis factors were optimized and investigated to find the ideal synthesis condition to grow SGB for thermoelectric (TE) applications. Raman spectra and FESEM-EDX reveal that the graphene formed on the silicon nanoparticles (SNP) is free from copper. The prepared SGB has excellent electrical conductivity (75.0 S/cm), which shows better results than the previous report. Furthermore, the SGB nanofillers in bismuth telluride (Bi2Te3) nanocomposites as TE materials exhibit a significant increment in Seebeck coefficients (S) compared to the pure Bi2Te3 sample from 109 to 170 μV/K at 400 K, as well as electrical resistivity decrement. This approach would offer a simple strategy to improve the TE performance of commercially available TE materials, which is critical for large-scale industrial applications.

NaCl-assisted chemical vapor deposition growth of MoSe2 and MoSe2/h-BN heterostructure

As a typical two-dimensional (2D) transition metal dichalcogenides (TMDCs), MoSe2 has attracted lots of interest due to its electronic and optical properties in recent years. The controllable synthesis of 2D MoSe2 and its heterostructure is of considerable importance for achieving diverse applications. Herein, we realized the controlled growth of MoSe2 by atmospheric pressure chemical vapor deposition (APCVD) method through using NaCl as the promoter. Raman and photoluminescence (PL) spectroscopy have been used to investigate the optical properties of MoSe2 domains with different layers. The dependence of structures on synthetic parameter is systematically investigated by tuning the growth conditions. On this basis, the monolayer MoSe2 was constructed on CVD-grown hexagonal boron nitride (h-BN) by an all-CVD approach. Detailed characterizations indicate that MoSe2 deposited on h-BN exhibits improved optical properties as compared to those on SiO2/Si. Our results could enrich the understanding for growth of TMDCs, advocating further investigation of their intrinsic properties and a variety of device applications.

Influence of halogen precursors on the growth of InSb nanostructures

The present work highlights the role of halogen compounds in modifying the shape of the InSb nanostructures, while maintaining a high crystalline quality of the nanostructures. One-dimensional (1D) nanowires (NWs) and two-dimensional (2D) nanoplatelets (NPLs) were synthesized by ambient pressure chemical vapor deposition. Our experimental results suggest that at a critical growth temperature of 512 ∘C, InSb NWs grow by the traditional vapor–liquid–solid growth mechanism when gold (Au) nanoparticles are used to initiate growth on an InSb film. The resulting NWs were found to have a cylindrical or tapered shape, were of high crystalline quality, and had stoichiometric composition. In the presence of halogen precursors, a change in morphology was observed and the resulting nanostructures were 2D NPLs and faceted NWs. Using existing models of crystal growth and concepts of volume, surface and edge energies, the experimental results are explained on the basis of chlorine atoms adsorbed on the wide or narrow facets of a nanocrystal, initiating nucleation and facilitating NPL or faceted NW formation. The incorporation of the chlorine atoms add a new degree of freedom to CVD synthesis of nanostructures and the results are promising for the controlled growth of novel 1D and 2D nanostructures for nano-electronic devices.

Niobium doping of CVD-WS2 monolayers using solid precursors with and without salt-KBr as a catalyst: A comparative study

The in situ doping of tungsten disulfide (WS2) monolayers with Niobium (Nb) atoms was obtained through the atmospheric pressure chemical vapor deposition (APCVD) method by controlling the Nb2O5 and WO3 precursors mass ratios. Samples were prepared employing the same growth parameters with and without the use of KBr salt as a catalyst. In both cases, the Nb incorporation quenches the luminescence intensity of the doped samples, and it depends on the Nb2O5:WO3 mass ratio. X-ray photoelectron spectroscopy (XPS) measurements were performed, and the observed redshift at the Fermi level indicated p-type doping. Nb-doped WS2 monolayers synthesized without the use of the catalyst have lower defect density, as revealed by a careful Raman analysis, and are free of agglomerates on their monolayers’ basal plane. The use of KBr as the catalyst increases the average crystal size but also increases the disorder effects compared with samples prepared without the use of salt. The presence of agglomerates of impurities at the surface of doped samples was observed in samples prepared with the use of salt as a catalyst. The controlled synthesis of p-type WS2 with low defect density is essential for developing electronic and photonic devices based on WS2 material.

Magnetoresistance properties in nickel-catalyzed, air-stable, uniform, and transfer-free graphene

A transfer-free graphene with high magnetoresistance (MR) and air stability has been synthesized using nickel-catalyzed atmospheric pressure chemical vapor deposition. The Raman spectrum and Raman mapping reveal the monolayer structure of the transfer-free graphene, which has low defect density, high uniformity, and high coverage (>90%). The temperature-dependent (from 5 to 300 K) current–voltage (I–V) and resistance measurements are performed, showing the semiconductor properties of the transfer-free graphene. Moreover, the MR of the transfer-free graphene has been measured over a wide temperature range (5–300 K) under a magnetic field of 0 to 1 T. As a result of the Lorentz force dominating above 30 K, the transfer-free graphene exhibits positive MR values, reaching ∼8.7% at 300 K under a magnetic field (1 Tesla). On the other hand, MR values are negative below 30 K due to the predominance of the weak localization effect. Furthermore, the temperature-dependent MR values of transfer-free graphene are almost identical with and without a vacuum annealing process, indicating that there are low density of defects and impurities after graphene fabrication processes so as to apply in air-stable sensor applications. This study opens avenues to develop 2D nanomaterial-based sensors for commercial applications in future devices.

Investigation of Contact Resistivities on APCVD (p) Poly-Si for Fired Passivating Contacts

We investigate the properties of boron doped polycrystalline Si (poly-Si) deposited by atmospheric pressure chemical vapor deposition (APCVD) applied to fired passivating contacts (FPC), where no high temperature annealing takes place apart from the contact firing step. X-ray diffraction measurements show that the APCVD poly-Si is already partially crystallized directly after deposition and the crystallite size further increases during firing. Without metallization an implied open circuit voltage of up to 719 mV is achieved. Screen-printing with an Ag paste yields minimal contact resistivities of down to 1 mΩcm² at high firing temperatures. Furthermore, thicker poly-Si layers, accomplished by driving the same wafer multiple times through the APCVD system, generally correspond to lower contact resistivities for the FPC. This can partly be explained by an increasing crystallinity and conductivity during deposition due to the higher thermal budget during deposition for thicker layers as well as by a larger contact area for thicker poly-Si layers. Scanning electron microscopy on sample cross-sections show that almost the entire poly-Si layer is covered with Ag crystallites at high firing temperatures. For lower temperatures a lower density of Ag crystallites in the poly-Si is visible. Both findings hold for planar and textured surfaces.

Investigation on the Long-Term Stability of AlOx/SiNy:H and SiNy:H Passivation Layers During Illuminated Annealing at Elevated Temperatures

Most crystalline Si based solar cells, e.g. passivated emitter and rear cells, rely on SiNy:H and AlOx/SiNy:H passivation layers. In this work, the long-term behavior of minority charge carrier lifetime in such symmetrically passivated samples during illuminated annealing at elevated temperatures is investigated by means of photoconductance decay based lifetime measurements, corona charging and capacitance voltage measurements. Thereby, AlOx layers, which are known to reduce H in-diffusion due to their barrier properties, deposited by atmospheric pressure chemical vapor deposition as well as by atomic layer deposition were considered enabling a comparison of different deposition techniques. The frequently published behavior of the bulk related degradation could be confirmed and the qualitative correlation between maximum defect density and the changing total amount of H in the Si bulk due to the barrier properties of the individual layers dielectric layers could be shown. Furthermore, for the subsequently observed degradation accelerated by a treatment at higher temperatures, literature indicates degradation to be caused by surface related degradation. Investigations on field effect passivation during degradation by means of corona charging and CV measurements showed a large drop in fixed negative charges in the passivation layer stacks.