Abstract
Germanium sulfide (GeS) is a notable two-dimensional (2D) layered material that has gained attention across various research domains. However, challenges remain in realizing large areas of high-quality 2D GeS, despite the efforts made. Recently, we have successfully synthesized rectangular 2D single-crystal GeS flakes with a thickness of about 52 nm and a lateral length of 100 μm by one-step space-confined atmospheric pressure chemical vapor deposition (APCVD) using sulfur and germanium powders as raw materials. There is a direct relationship between the area size and the growth time. The further prepared GeS device has good photoresponsivity in the visible range. At 532 nm, it includes a responsivity of 40 mA/W, a detectivity of 8 × 108 Jones and a fast response time of 199 ms. In addition, the GeS device exhibits p-type conductive behavior and a unique self-powered effect. After prolonged storage, the GeS photodetector still exhibits good and stable photoswitching characteristics.
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