In this study, the effects of selected standard surface cleaning processes on sapphire surfaces were investigated. Wet chemistries commonly used in Si cleaning including HPM, APM and dilute HF were studied along with alumina etching H3PO4. The cleaned substrates were characterized by means of wetting angle measurements, AFM, and XPS analyses. The preliminary results presented in this report indicate that all chemistries studied were altering morphology of sapphire surface. The HPM and APM mixtures were found to smoothen the surface while the effect of acidic etchants, HF and H3PO4 was adverse and beneficial respectively. The XPS analysis indicated that within the range of elements monitored none of the above chemistries altered chemical composition of the sapphire surface in a meaningful manner.