Abstract
Diamond nanowhiskers could be obtained by anisotropic etching of as-grown and aluminum coated diamond films in a radio frequency (RF) Ar/O 2 plasma. The distributions of diamond nanowhiskers were on the presence of Al coatings. For the Al-coated diamond film, the distribution of the whiskers was almost same as that of the coated Al particles. However, for the as-grown diamond film, the whiskers randomly formed on the diamond surface with higher etching rate. Comparing these two situations, we found that Al coating was a critical factor in the etching process which served as mask contributing to restraining etching the film underneath. The whiskers (1 μm in height and 50 nm in diameter) could be obtained under optimum etching conditions. In addition, the dependence of the distribution of the whiskers on Al coating time was demonstrated.
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