Ti–48Al–1.3Fe-1.1V–0.3B (at.%) alloy was siliconized to improve its oxidation resistance by burying it in Si powder and heating at 1073, 1123, 1173 and 1273 K for 18 ks in a vacuum. The isothermal oxidation behavior of all the treated specimens was tested at 1173 K for 349.2 ks (97 h) in air using a thermobalance. To evaluate the practical performance of this measure, the cyclic oxidation behavior of the specimen, siliconized at 1273 K, was also examined at 1123 K for 1260 ks (350 h) in a simulated exhaust gas. The element distribution, phase composition, and morphology of the Si-modified layer, and the oxide scale were characterized by AES, XRD, GAXRD and SEM. The results indicated that the TiAl alloy siliconized above 1173 K shows excellent isothermal and cyclic oxidation resistance in air or simulated exhaust gas. When siliconizing temperature is below 1123 K, however, this beneficial effect was limited to the early stage of oxidation. A Si-rich layer which was identified as Ti 5Si 3 and the following an Al- rich zone are the major constituents in the Si-modified layer on the TiAl substrate if the siliconizing temperature is above 1173 K. The thickness of the above constituent layers increases with rising siliconizing temperature. Existence of Si and Al with high concentrations is detected in the oxide scale even after long-term oxidation. It is concluded that the existing Si-rich layer, probably amorphous silica, and large amounts of Al 2O 3 in the oxide scale along with the remaining of the newly formed phase such as Ti 5Si 3 are responsible for the significant improvement in the oxidation resistance.
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