Abstract
Single crystals of REMn 2Si 2 (RE=Y, Tb, Dy, Ho) were grown from a high-temperature lead metal solution in an argon atmosphere. Single crystals of REMn 2Si 2 were obtained in the form of thin plates with well-developed (001) faces. The as-grown REMn 2Si 2 crystals were used for measurements of micro-Vickers hardness at room temperature, oxidation resistance in air and magnetic susceptibility at low temperatures. The values of the micro-Vickers hardness for the (001) faces of REMn 2Si 2 crystals are about 5.5 GPa. The oxidation process of REMn 2Si 2 crystals was studied at a temperature below 1473 K by TG-DTA analyses. The TG curves show that the oxidation of YMn 2Si 2, TbMn 2Si 2, DyMn 2Si 2 and HoMn 2Si 2 crystals starts at about 811, 807, 844, and 849 K, respectively. Weight gains of the compounds after TG determination were measured to be in the range of 14.7–19.7 mass%. The results of magnetic susceptibility measurements at low temperatures of the compounds are discussed.
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