Abstract
The oxidation behavior of Ti5Si3+y (y=0 or 0.2) and Ti5Si3Zx (Z=C, N or O, x=0.25 or 0.5) was studied at 1000°C in air or argon–oxygen mixtures for up to 500 h. Ti5Si3 has poor oxidation resistance in air because of the formation of an oxide scale rich in rutile and subscale formation of TiN, TiSi, TiSi2 and Si. In contrast, Ti5Si3.2 has excellent oxidation resistance because of the formation of a silica scale. Samples with interstitial oxygen or nitrogen show only slight improvements in the early stages of oxidation, compared to Ti5Si3, which is in stark contrast to previous research. However, samples with interstitial carbon displayed excellent oxidation resistance at 1000°C, consistent with previous research.
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