Developing a nanoscale secondary thermal conduction network within carbon fiber performs is a challenging yet effective method to substantially enhance the thermal conductivity of C/C composites. In this study, a strategy for creating a three-dimensional (3D) SiC nanowires (SiCNWs) thermal conductivity network in carbon felts (CFs) was implemented using vacuum thermal evaporation technology to fabricate SiCNWs modified C/C composites (SiCNW–C/C). The growth mechanism of SiC nanowires within CFs and their impact on the microstructure and thermal conductivity of the C/C composite were thoroughly investigated. The findings indicate that a SiC nanowires thermal conduction network can be successfully established within carbon felts without catalysts by initiating nucleation sites and managing reaction pressure. An appropriate reaction pressure is crucial not only for the uniform growth of SiC nanowires but also as a key factor in modulating the content and microstructure of the SiC nanowires. SiC nanowires prepared at 150 Pa exhibit minimal structural defects and are evenly distributed throughout the carbon felts, markedly enhancing the thermal response rate of the felts. The thermal conductivity of these SiCNW-modified C/C composites, both parallel and perpendicular to the carbon fibers, increased to 173 W/m•K and 112 W/m•K, respectively, approximately tripling that of the pure C/C composite. The exceptional thermal management capabilities of SiCNW–C/C were empirically validated through simulated operational chips and finite element simulation. This work presents an effective approach for producing C/C composite with high thermal conductivity particularly through the thickness, offering promising applications in the thermal management of advanced electronics.
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