Fabrication and evaluation of high-performance 3D interpenetrated network structures SiC/Al composites with high-purity plate-like α-SiC framework

Abstract

To reinforce compatibility with the thermophysical and mechanical properties of SiC/Al composites for electronic packaging to improve the stability and reduce fatigue failure of electronic integrated devices, a novel 3D SiC reinforced framework with interpenetrated plate-like α-SiC grains was synthesized. A small amount of doped α-SiC was seeded to induce the transformation of β-SiC to plate-like α-SiC at 2,300 °C, forming a high-purity α-SiC strongly bonded framework. Vacuum/gas pressure infiltration of Al alloy was subsequently used to manufacture the 3D interpenetrated network structure SiC/Al (SiC3D/Al) composite. Characterization results showed that 15% (in mass) seeds provided the composite with the optimal comprehensive performance, including a low coefficient of thermal expansion (CTE) of 5.54 × 10−6 K−1, a high thermal conductivity (λ) of 239.08 W·m−1·K−1, the highest flexural strength of 326.84 MPa, and a low thermal deformation parameter (TDP) of 0.023. High-purity plate-like grains enhanced the purity of the framework promoting a significant improvement in λ. As the seed content increased to 20% (in mass), both λ and CTE reached optimal values of 5.22 × 10−6 K−1 and 243.14 W·m−1·didiK−1, but the mechanical properties declined by 10.30%. The synergistic effect of the well-bonded interface and the high-purity 3D SiC framework balanced excellent mechanical properties and multiple thermal functions.