Two-dimensional Electron Gas Research Articles

Effect of rapid thermal annealing on DC performance of Mg0.30Zn0.70O/Cd0.15Zn0.85O MOSHFET

This study focuses on a cost-effective method for fabrication of a metal oxide semiconductor-heterostructure field effect transistor (MOSHFET) based on MgZnO/CdZnO (MCO) using dual ion beam sputtering (DIBS), in contrast to the more expensive epitaxial growth system. The MOSHFETs developed in this research exhibit notable characteristics, such as a substantial two-dimensional electron gas (2DEG) transconductance (∼2.6 mS), a high ION/IOFF response ratio in the order of 108, and minimal gate leakage current. Furthermore, we explore the impact of rapid thermal annealing (RTA) on the drain current at various temperatures (600 °C and 800 °C). The results indicate a fourfold improvement in drain current compared to unannealed conditions, primarily attributed to reduced contact resistance and no degradation in term of MgZnO/CdZnO structure. Additionally, an analysis of post-RTA treatment under a nitrogen (N2) atmosphere on gate leakage current is presented. The investigation spans temperatures ranging from 400 °C to 800 °C, revealing that above 600 °C (gate leakage at 400 °C–600 °C is around ∼10−9 A), gate leakage in HFET is augmented by one order of magnitude (∼10−8 A) due to a phase change in the dielectric. These findings underscore the feasibility of DIBS-grown MCO MOSHFETs as an economical solution for the mass production of switching devices and sensors.

A Novel high-voltage DMG Fe-doped AlGaN/AlN/GaN HEMTs with sheet charge density model

In this work, two-dimensional electron gas of the dual material gate Fe doped AlGaN/AlN/GaN High Electron Mobility Transistors (HEMTs) device, sheet charge density model is demonstrated. The model is constructed by considering the electron charge in the barrier layer and the quasi triangular quantum well. This sheet charge density is calculated by Fermi-Dirac statistics by the formation of various sub energy bands and it is valid for all bias voltages. Higher carrier densities are produced and the introduction of the Fe-doped AlN layer reduces the electrons penetration to pass through the AlGaN barrier layer. The model's transcoductance variation is basically constant over an extensive variety of gate source voltages, thereby rendering it perfect regarding high-performance amplifications. The developed analytical model is demonstrated and the simulation results are validated with TCAD simulation. A good agreement is achieved with both analytical and simulation results for all of the voltages employed and device geometries.

High-speed independent polarization modulation based on dual channel 2DEG anisotropic terahertz metasurfaces.

In communication and imaging systems, anisotropic metasurfaces bring new degrees of freedom for the independent control of electromagnetic waves with different polarizations. This paper proposes a dual-polarization modulation metasurface (DPMM) operating in the terahertz (THz) frequency range, which can effectively and independently modulate two orthogonally linearly polarized electromagnetic waves. The metasurface unit adopts an anisotropic structure, and by integrating multiple GaN-based high electron mobility transistors (GaN-HEMTs) into the anisotropic structure, independent control of the two-dimension electron gas (2DEG) carrier concentration in the dual-polarization channel is achieved, enabling selective modulation of x-polarization and y-polarization waves. Simulation and static experimental results demonstrate the excellent modulation isolation performance of the DPMM, with a maximum isolation exceeding 45 dB. Dynamic experiments further highlight the high-speed modulation effect, with modulation speeds exceeding 1 GHz for a single channel and an overall modulation speed of 2 GHz for dual polarization, highlighting its potential for enhancing channel capacity and information throughput in THz communication and imaging systems.

Quantum scaling for the metal–insulator transition in a two-dimensional electron system

The quantum phase transition observed experimentally in two-dimensional (2D) electron systems has been a subject of theoretical and experimental studies for almost 30 years. We suggest Gaussian approximation to the mean-field theory of the second-order phase transition to explain the experimental data. Our approach explains self-consistently the universal value of the critical exponent 3/2 (found after scaling measured resistivities on both sides of the transition as a function of temperature) as the result of the divergence of the correlation length when the electron density approaches the critical value. We also provide numerical evidence for the stretched exponential temperature dependence of the metallic phase’s resistivities in a wide range of temperatures and show that it leads to correct qualitative results. Finally, we interpret the phase diagram on the density-temperature plane exhibiting the quantum critical point, quantum critical trajectory and two crossover lines. Our research presents a theoretical description of the seminal experimental results.

The optimization of a GaN-based current aperture vertical electron transistor

The main objective of this paper is to simulate and optimize a current aperture vertical electron transistor (CAVET) based on gallium nitride (GaN), which combines both a two-dimensional electron gas (2DEG) and a vertical structure using the SILVACO-TCAD simulator. The dimensions of the structure were reduced by 45% to minimize the size and improve the performances of the proposed device; also, a part of aluminum nitride (AlN)was added to the current blocking layer (CBL) to modulate the conduction band profile. The results obtained from the simulation of our structure demonstrated a maximum drain current of 1.8 A/mm, Pinch-off voltage (VP) of -6 V, drain induced barrier lowering (DIBL) of 166 mV/V, maximum transconductance (gm) of 570 mS/mm, gate-leakage of 7.10-7 A, cut-off frequency (ft) of 200 GHz, maximum oscillation frequency (fMax) of 400 GHz. The proposed device exhibited outstanding performance while consuming low power, making it well-suited for use as a low-noise amplifier (LNA) in satellite reception applications.

Phase Transition near the Filling Factor ν = 3

A phase transition accompanied by the appearance of a spike in the longitudinal resistance of a two-dimensional electron system has been studied using the electron spin resonance near the filling factor ν = 3 in the ZnO/MgZnO heterojunction. This transition occurs when the tilt angle θ of the magnetic field is increased to some critical value θc. An analysis of the spin resonance amplitude has made it possible to demonstrate the spin nature of this phenomenon. For example, the ground state of the system on both sides of the transition has a nonzero spin polarization, which changes by several times when the phase of the system is changed. Strong spin resonance is observed both at θ < θc and at θ > θc. Surprisingly, the spin resonance at the critical angle θc has been detected in only one phase, which lies in the region of magnetic fields below the critical field Bc corresponding to the spike position in the longitudinal resistance. An increase in the magnetic field to this value leads to a decrease in the resonance amplitude and an increase in the resonance width. In the field region above Bc, the spin resonance disappears completely. Such behavior of the spin resonance is most likely due to the formation of domains with different spin polarizations in the electron system.

Field emission characteristics of AlGaN/GaN nanoscale lateral vacuum diodes

We report the design, fabrication, and measurement of the field emission (FE) characteristics of AlGaN/GaN nanoscale lateral vacuum diodes with triangular cathodes and cathode to anode spacings from 50 to 600 nm. The FE characteristics of the AlGaN/GaN diodes with metallic or AlGaN/GaN anodes show successful rectification with forward bias FE current in the range of microamperes or milliamperes, respectively, when biased within a maximum range varying from 10 to 30 V. In the forward bias mode, the measured current Im vs applied anode to cathode bias Vm are well fitted to Murphy–Good profiles associated with FE at higher biases, and an Ohmic leakage profile below the threshold for FE. Our results are the first successful demonstration of FE of electrons between the two two-dimensional electron gases (2DEGs) present on both sides of a nanogap formed by electron lithography through an AlGaN/GaN heterojunction. A qualitative explanation of the loop-type FE characteristics of both AlGaN/GaN vacuum diodes, with either metallic or AlGaN/GaN anodes, is presented.

Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure.

High channel current of the high electron mobility transistors (HEMTs) and high relative responsivity of the photodetectors (PDs) were demonstrated in the AlGaN/AlN/GaN channel-stacking epitaxial structures. The interference properties of the X-ray curves indicated high-quality interfaces of the conductive channels. The AlGaN/AlN/GaN interfaces were observed clearly in the transmission electron microscope micrograph. The saturation I ds currents of the HEMT structures were increased by adding a number of channels. The conductive properties of the channel-stacking structures corresponded to the peaks of the transconductance (g m) spectra in the HEMT structures. The depletion-mode one- and two-channel HEMT structures can be operated at the cutoff region by increasing the reverse V gs bias voltages. Higher I ds current in the active state and lower current in the cutoff state were observed in the two-channel HEMT structure compared with one- and three-channel HEMT structures. For the channel-stacking metal-semiconductor-metal photodetector structures, the peak responsivity was observed at almost 300 nm incident monochromic light, which was increased by adding a number of channel layers. The channel current of the HEMT devices and the photocurrent in the PD devices were increased by adding a number of two-dimensional electron gas (2DEG) channels. By using a flat gate metal layer, the two-channel AlGaN/AlN/GaN HEMT structures exhibited a high I ds current, a low cutoff current, and a high peak g m value and have the potential for GaN-based power devices, fast portable chargers, and ultraviolet PD applications.

Investigation of Three‐Channel Heterostructure and High‐Electron‐Mobility Transistor with Quaternary In0.1Al0.5Ga0.4N Barrier

Herein, a high‐quality In0.1Al0.5Ga0.4N/GaN three‐channel (TC) heterostructure and the high‐electron‐mobility transistor (HEMT) based on it are proposed and investigated. The quaternary nitrides offer additional flexibility in adjusting the lattice constant and bandgap, enabling the achievement of a nearly strain‐free high‐Al‐content barrier. By stacking three In0.1Al0.5Ga0.4N/GaN heterostructures, a high 2D electron gas density of 2.59 × 1013 cm−2 and a high electron mobility of 1707 cm2 V−1 s−1 are achieved. As compared with the AlGaN/GaN TC heterostructure, the In0.1Al0.5Ga0.4N/GaN TC heterostructure reduces the sheet resistance by 39%, resulting in a 40 % reduction in the on‐resistance of the TC HEMT. Additionally, the inverse piezoelectric effect of the In0.1Al0.5Ga0.4N/GaN TC‐HEMT is investigated by negative‐gate voltage bias step‐stress experiments. During the stress experiments, no irreversible degradation is observed in the In0.1Al0.5Ga0.4N/GaN TC‐HEMT, while the AlGaN/GaN TC‐HEMT exhibits a significant deterioration beyond the critical voltage. The reliability related to the inverse piezoelectric effect of the devices can be further improved due to the lower stress in the lattice‐matched quaternary barrier.

High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells

We report on transport characteristics of field effect two-dimensional electron gases (2DEGs) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus is observed to filling factor ν = 2 in magnetic fields of up to B = 18 T, at electron densities up to 8 ×1011/cm2. Peak mobility is 11 000 cm2/Vs at 2 ×1012/cm2. Large Rashba spin–orbit coefficients up to 124 meV Å are obtained through weak anti-localization measurements. Proximitized superconductivity is demonstrated in Nb-based superconductor-normal-superconductor (SNS) junctions, yielding 78%–99% interface transparencies from superconducting contacts fabricated ex situ (post-growth), using two commonly used experimental techniques for measuring transparencies. These transparencies are on a par with those reported for epitaxially grown superconductors. These SNS junctions show characteristic voltages IcRn up to 870 μV and critical current densities up to 9.6 μA/μm, among the largest values reported for Nb-InAs SNS devices.

Electronic-grade epitaxial (111) KTaO3 heterostructures.

KTaO3 heterostructures have recently attracted attention as model systems to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating heterostructure interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on high-quality epitaxial (111) KTaO3 thin films using an adsorption-controlled hybrid PLD to overcome the vapor pressure mismatch. Electrical and structural characterizations reveal that the higher-quality heterostructure interface between amorphous LaAlO3 and KTaO3 thin films supports a two-dimensional electron gas with substantially higher electron mobility, superconducting transition temperature, and critical current density than that in bulk single-crystal KTaO3-based heterostructures. Our hybrid approach may enable epitaxial growth of other alkali metal-based oxides that lie beyond the capabilities of conventional methods.

Microscopic insights into metal diffusion and ohmic contact formation in delta-doped GaAs/(Al,Ga)As core/shell nanowires

Semiconductor nanowires (NWs) are promising candidates for use in electronic and optoelectronic applications, offering numerous advantages over their thin film counterparts. Their performance relies heavily on the quality of the contacts to the NW, which should exhibit ohmic behavior with low resistance and should be formed in a reproducible manner. In the case of heterostructure NWs for high-mobility applications that host a two-dimensional electron gas, ohmic contacts are particularly challenging to implement since the NW core constituting the conduction channel is away from the NW surface. We investigated contact formation to modulation-doped GaAs/(Al,Ga)As core/shell NWs using scanning transmission electron microscopy, energy dispersive x-ray spectroscopy and electron tomography to correlate microstructure, diffusion profile and chemical composition of the NW contact region with the current–voltage (I–V) characteristics of the contacted NWs. Our results illustrate how diffusion, alloying and phase formation processes essential to the effective formation of ohmic contacts are more intricate than in planar layers, leading to reproducibility challenges even when the processing conditions are the same. We demonstrate that the NW geometry plays a crucial role in the creation of good contacts. Both ohmic and rectifying contacts were obtained under nominally identical processing conditions. Furthermore, the presence of Ge in the NW core, in the absence of Au and Ni, was found as the key factor leading to ohmic contacts. The analysis contributes to the current understanding of ohmic contact formation to heterostructure core/shell NWs offering pathways to enhance the reproducibility and further optimization of such NW contacts.

Comparative analysis of working principles and applications of MOSFET and HEMT

Semiconductor materials are currently one of the most core materials in the worlds high-tech industry, and the research and development of semiconductor materials is related to the improvement of human technological level. This paper presents a comparative study of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and High Electron Mobility Transistors (HEMTs), two pivotal components in electrical engineering, each with unique characteristics and functions. Despite structural similarities, MOSFETs and HEMTs differ significantly in operation and conduction methods. MOSFETs rely on an inversion layer formed at the semiconductor-oxide interface, controlled by gate voltage, for electron conduction. Conversely, HEMTs utilize a two-dimensional electron gas (2DEG) at the interface of materials like Gallium Nitride and Aluminum Gallium Nitride, offering high electron mobility crucial for performance. Both share similar I-V characteristics but differ in performance under various conditions. MOSFETs are cost-effective, ideal for mass production and general applications, while HEMTs excel in stability and performance in extreme conditions, suitable for high-performance needs. This study underscores the importance of selecting the right component based on application-specific requirements, highlighting MOSFETs for cost-efficiency and HEMTs for challenging environments. This article will provide some guidance for the research of MOSFET and HEMT.

Impact of eliminating ungated access regions on DC and thermal performance of GaN-based MIS-HEMT

The impacts of eliminating access regions (AR) on DC and thermal performance of GaN-based MIS-HEMT have been studied using a device of 4 µm gate length. Nominal absence of ARs was achieved by a metal-organic chemical vapor deposition-regrown heavily n-doped GaN contact region extended to the two-dimensional electron gas (2DEG) channel (with sheet resistance as low as 14 Ω/ ◻ and ohmic contact resistance of 0.20 Ω⋅ mm) and 22-nm-thick AlN/Al2O3/HfO2 insulator layers acting as both gate dielectrics and sidewall spacers. As a result, a low knee voltage (2.5 V @ VGS = +2 V) comparable to deeply-scaled devices was attained, revealing the dominant role of ARs in knee voltages. High linearity at lower supply voltages (gate voltage swing of 7.3 V @ VDS = 5 V) and a faster GVS saturation trend with V DS increasing were observed, benefiting from the improved utility of applied lateral voltage. Moreover, a much lower thermal resistance compared to that of the conventional MIS-HEMT structure (146 vs. 202 K W−1) was extracted by a static-pulsed I-V measurement method. Simplified TCAD simulations were conducted to explain the underlying mechanisms, demonstrating that the enhanced surface heat flow covered by the gate metal as well as the more uniform electric field along the 2DEG channel accounts for the better capability of heat management in the device free of ARs. Our results indicate the size of DC and thermal performance enhancements obtained by eliminating ARs in a GaN-based MIS-HEMT structure.

Phase shifter based on two-dimensional electron system on a dielectric substrate

We experimentally investigate phase shift gained by electromagnetic radiation transmitted through a two-dimensional electron system (2DES) on a dielectric substrate. We systematically examined the dependence of the phase shift on the radiation frequency and 2DES electron density for the GaAs semiconductor substrate. A theoretical approach was developed that found good agreement with experimental results. We demonstrate a practically achievable phase shift of 105°. Obtained findings pave the way for the design of terahertz devices that can manipulate the radiation phase in a controlled and precise manner.

Influence of the electron density on the giant negative magnetoresistance in two-dimensional electron gases

variation of the electron density via a metallic gate can control the disorder potentials in two-dimensional electron gases (2DEGs). This also influences the negative magnetoresistance at low magnetic fields, which is commonly observed in ultrahigh mobility 2DEGs. We investigate the temperature-dependent giant negative magnetoresistance (GNMR) as a function of the electron density for several temperatures and currents. Thereby, we find that the GNMR behavior depends decisively on the electron density. This observation is attributed to a changed disorder potential with electron density. In the case of higher electron densities, a nonlinear current dependency of the GNMR is observed, which could be described within the hydrodynamic regime. Published by the American Physical Society 2024

Giant Tunability of Rashba Splitting at Cation-Exchanged Polar Oxide Interfaces by Selective Orbital Hybridization.

The 2D electron gas (2DEG) at oxide interfaces exhibits extraordinary properties, such as 2D superconductivity and ferromagnetism, coupled to strongly correlated electrons in narrow d-bands. In particular, 2DEGs in KTaO3 (KTO) with 5d t2g orbitals exhibit larger atomic spin-orbit coupling and crystal-facet-dependent superconductivity absent for 3d 2DEGs in SrTiO3 (STO). Herein, by tracing the interfacial chemistry, weak anti-localization magneto-transport behavior, and electronic structures of (001), (110), and (111) KTO 2DEGs, unambiguously cation exchange across KTO interfaces is discovered. Therefore, the origin of the 2DEGs at KTO-based interfaces is dramatically different from the electronicreconstruction observed at STO interfaces. More importantly, as the interface polarization grows with the higher order planes in the KTO case, the Rashba spin splitting becomes maximal for the superconducting (111) interfaces approximately twice that of the (001) interface. The larger Rashba spin splitting couples strongly to the asymmetric chiral texture of the orbital angular moment, and results mainly from the enhanced inter-orbital hopping of the t2g bands and more localized wave functions. This finding has profound implications for the search for topological superconductors, as well as the realization of efficient spin-charge interconversion for low-power spin-orbitronics based on (110) and (111) KTO interfaces.

Adaptive impedance matching in microwave and terahertz metamaterial absorbers using PIN diodes and GaN HEMTs

Metamaterial absorbers allow electromagnetic waves to be converted into heat energy based on impedance matching. However, passive metamaterial absorbers exhibit fixed absorption characteristics, limiting their flexibility. This work demonstrates tunable microwave and terahertz absorbers by integrating adjustable resistors into the metamaterial units. First, a microwave absorber from 1 to 5 GHz was designed by embedding PIN diodes with voltage-controlled resistance. Calculations, simulations, and measurements verified two separate absorption peaks over 90% when optimized to a resistance of 250 Ω. The absorption frequencies shifted based on the resistor tuning. Building on this, a terahertz absorber was modeled by substituting gallium nitride high electron mobility transistors (GaN HEMTs) as the adjustable resistor component. The GaN HEMTs were controlled by an integrated gate electrode to modify the two-dimensional electron gas density, allowing resistance changes without external voltage terminals. Simulations revealed two absorption peaks exceeding 90% absorption at 0.34 THz and 1.06 THz by adjusting the equivalent resistance from 180 Ω to 380 Ω, and the tunable resistance is verified by DC measurement of single GaN HEMT in the unit. This work demonstrates how integrating adjustable resistors enables dynamic control over the absorption frequencies and bandwidths of metamaterial absorbers. The proposed geometries provide blueprints for tunable microwave and terahertz absorbers.

Novel 2DEG System at the HfO2/STO Interface.

Multifunctional integration in a single device has always been a hot research topic, especially for contradictory phenomena, one of which is the coexistence of ferroelectricity and metallicity. The complex oxide heterostructures, as symmetric breaking systems, provide a great possibility to incorporate different properties. Moreover, finding a series of oxide heterostructures to achieve this goal remains as a challenge. Here, taking the advantage of different physical phenomena, we use H2 plasma to pretreat the SrTiO3 (STO) substrate and then fabricate HfO2/STO heterostructures with it. The novel, well-repeatable metallic two-dimensional electron gas (2DEG) is directly obtained at the heterointerfaces without any further complex procedures, while the obvious ferroelectric-like behavior and Rashba spin-orbit coupling are also observed. The understanding of the mechanism, as well as the modified facile preparation procedure, would be meaningful for further development of ferroelectric metal in complex oxide heterostructures.

Machine learning methods for background potential estimation in 2DEGs

Two-dimensional electron gases (2DEGs) can show exceptional carrier mobility, making them promising candidates for future quantum technologies. However, impurities and defects can significantly degrade their performance, impacting transport, conductivity, and coherence times. We leverage scanning gate microscopy (SGM) and machine learning approaches to extract the potential landscape of 2DEGs from SGM data. We compare three techniques: image-to-image translation with generative adversarial networks (GANs), cellular neural networks (CNNs), and an evolutionary search algorithm. Notably, the evolutionary approach outperforms both alternatives in defect identification and analysis. This work clarifies the interaction between defects and 2DEG properties, demonstrating the potential of machine learning for understanding and manipulating quantum materials, facilitating advancements in quantum computing and nanoelectronics.