Abstract
In this work, two-dimensional electron gas of the dual material gate Fe doped AlGaN/AlN/GaN High Electron Mobility Transistors (HEMTs) device, sheet charge density model is demonstrated. The model is constructed by considering the electron charge in the barrier layer and the quasi triangular quantum well. This sheet charge density is calculated by Fermi-Dirac statistics by the formation of various sub energy bands and it is valid for all bias voltages. Higher carrier densities are produced and the introduction of the Fe-doped AlN layer reduces the electrons penetration to pass through the AlGaN barrier layer. The model's transcoductance variation is basically constant over an extensive variety of gate source voltages, thereby rendering it perfect regarding high-performance amplifications. The developed analytical model is demonstrated and the simulation results are validated with TCAD simulation. A good agreement is achieved with both analytical and simulation results for all of the voltages employed and device geometries.
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