Abstract
In this paper we have improved the DC characteristics of conventionally used AlGaN/GaN High electron mobility transistor (HEMT) by inserting an oxide layer (HfO 2 ) in between the metal gate and the AlGaN barrier layer. The analysis of DC characteristics of newly simulated AlGaN/GaN metal oxide semiconductor High electron mobility transistor (MOSHEMT) device shows enhanced performance in comparison to the AlGaN/GaN HEMT device. Both the devices are simulated by using Synopsys Technology Computer Aided Design (TCAD). Various DC parameters such as I d -V d , I d -V g , I on /I off ratio, leakage current and sheet charge density for both the devices are extracted and analyzed. After comparison of important DC parameters, MoSHEMT shows enhanced performance over HEMT.
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