Abstract
In this work the temperature depended characteristic of epitaxial-Gadolinium(III)oxide ($G\mathrm{d}_{2}\mathrm{O}_{3}$)/ $\alpha$-Gallium (III)oxide($\alpha$-Ga2O<inf>3</inf>)/ Yttrium(III)oxide (Y<inf>2</inf>O<inf>3</inf>) base AlGaN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) is studied and compared the I<inf>on</inf>/I<inf>off</inf> ratio with the of conventional high electron mobility transistor (HEMT), both grown on 150 mm Si (Ill) substrate. The single crystalline epitaxial Gd<inf>2</inf>O<inf>3</inf>/$\alpha$-Ga2O<inf>3</inf>/Y<inf>2</inf>O<inf>3</inf> is sandwiched between the gate metal and barrier AlGaN which in turn gives improvement in the gate leakage current for various high temperature. The IoN/IoFF ratio of the transistor was measured as high as $\sim10^{12}$ even at 400 k with the lowest Vth shift with temperature. The Y<inf>2</inf>O<inf>3</inf> -MOSHEMT has a high I<inf>on</inf>/I<inf>off</inf> ratio as compared to HEMT and Gd<inf>2</inf>O<inf>3</inf> -MOSHEMT at raised temperatures and also a significantly low gate leakage current. Since epitaxial Y<inf>2</inf>O<inf>3</inf> based MOSHEMT is suitable candidate for high temperature application
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