2D Electron Research Articles

Electric Field-Driven Jetting and Water-Assisted Transfer Printing for High-Resolution Electronics on Complex Curved Surfaces

High-resolution electronics on complex curved surfaces have wide applications in fields such as biometric health monitoring, intelligent aircraft skins, conformal displays, and biomimetics. However, current manufacturing processes can only adapt to limited curvature, posing a significant challenge for achieving high-resolution fabrication of electronics on complex curved surfaces. In this study, we propose a novel fabrication strategy that combines electric field-driven jetting and water-assisted transfer printing techniques to achieve the fabrication of high-resolution electronics on complex curved surfaces. The electric field-driven jetting enables the fabrication of high-resolution 2D electronics on sacrificial layer substrates. After dissolving the sacrificial layer, it is observed that the 2D electronics form a self-supporting structure with a certain rigidity and flexibility. During the water-assisted transfer printing process, this self-supporting structure undergoes stretching deformation with excellent conformity of the electronics to curved surfaces while effectively minimizing wrinkles. Finally, we successfully demonstrate the manufacture of 25 μm high-resolution electronics on highly curved surfaces (nautilus shell) and complex (scallop shell, stone) surfaces. The integrity of transferred circuit patterns and consistency of conductors are verified through infrared thermography analysis, confirming the feasibility of this manufacturing strategy. In addition, a protective film with strong adhesive properties is sprayed onto the transferred curved circuits to enhance their adhesion and resistance to extreme environments such as acids and alkalis. Our proposed technique provides a simple and effective new strategy for the fabrication of high-resolution electronics on complex curved surfaces.

Electron Glass Phase with Resilient Zhang-Rice Singlets in LiCu_{3}O_{3}.

LiCu_{3}O_{3} is an antiferromagnetic mixed valence cuprate where trilayers of edge-sharing Cu(II)O (3d^{9}) are sandwiched in between planes of Cu(I) (3d^{10}) ions, with Li stochastically substituting Cu(II). Angle-resolved photoemission spectroscopy (ARPES) and density functional theory reveal two insulating electronic subsystems that are segregated in spite of sharing common oxygen atoms: a Cu d_{z^{2}}/O p_{z} derived valence band (VB) dispersing on the Cu(I) plane, and a Cu 3d_{x^{2}-y^{2}}/O 2p_{x,y} derived Zhang-Rice singlet (ZRS) band dispersing on the Cu(II)O planes. First-principle analysis shows the Li substitution to stabilize the insulating ground state, but only if antiferromagnetic correlations are present. Li further induces substitutional disorder and a 2D electron glass behavior in charge transport, reflected in a large 530meV Coulomb gap and a linear suppression of VB spectral weight at E_{F} that is observed by ARPES. Surprisingly, the disorder leaves the Cu(II)-derived ZRS largely unaffected. This indicates a local segregation of Li and Cu atoms onto the two separate corner-sharing Cu(II)O_{2} sub-lattices of the edge-sharing Cu(II)O planes, and highlights the ubiquitous resilience of the entangled two hole ZRS entity against impurity scattering.

SiC-based high electron mobility transistor

This paper describes the fabrication of a SiC-based high electron mobility transistor (HEMT). A single-crystal 3C–SiC layer was grown on a C-face 4H–SiC substrate, and 2D electron gas was induced at the 3C–SiC/4H–SiC heterointerface due to the unique polarization physics. The measured Hall mobility of the 2DEG was 586 cm2/V s at room temperature. Source, gate, and drain electrodes were fabricated on the 3C–SiC surface. The drain current for the fabricated SiC-HEMT was measured to be 47.5 mA/mm, and the transconductance was estimated to be 13.5 mS/mm.

Electrical Properties of Electrochemically Exfoliated 2D Transition Metal Dichalcogenides Transistors for Complementary Metal‐Oxide‐Semiconductor Electronics

AbstractThe unique semiconducting characteristics of 2D materials, such as transition metal dichalcogenides (TMDs), have drawn significant interest in the field of electronic devices. However, the dependence of the device performance on the electrical properties of electrochemically exfoliated TMD nanoflakes remains unclear. In this study, the intrinsic electrical properties of diverse electrochemically exfoliated TMD nanoflakes are investigated and their applications in fully solution‐processed 2D electronics are explored. The study reveals that MoSe2 and WS2 nanoflakes are suitable candidates with moderate electron concentrations of 5.7 × 1012 and 2.5 × 1012 cm−2, respectively. These moderate electron concentrations enable a low off‐state current and high on‐state current, leading to a large on–off ratio (> 106) for the fabricated transistors. Furthermore, moderate annealing can increase the mobility by one order of magnitude by reducing the contact resistance and improving charge transport. Additionally, the trap density is significantly reduced, leading to an improved stability. Finally, fully solution‐processed 2D complementary inverters with a high voltage gain of 60 are demonstrated. This study contributes to a growing understanding of the properties of 2D materials in terms of transistor performances and promotes the development of solution‐processed devices applicable in next‐generation electronics.

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors

A detailed analysis of self‐consistent potentials, electric fields, electron distributions, and transport properties of dual‐channel (DC) n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN high‐electron‐mobility transistors (HEMTs) is performed in this article. The 2D electron gas (2DEG) densities and mobility states limited by different scattering mechanisms in channel 1 and channel 2 are obtained, with varying values of doping concentrations, ambient temperatures, Al components, and thicknesses of the back barrier layer. The reduced and increased 2DEG densities are respectively observed in channel 1 and channel 2 with growing Al fractions and thicknesses of the AlxGa1−xN layer. Alloy disorder scattering exhibits a superior effect on carriers in channel 2 due to the lower barrier height and higher permeable electrons, which together with the interface roughness scattering severely depends on the thicknesses and Al fractions of the back barrier layer. Polar optical phonon scattering becomes important at higher temperatures. The trend of individual mobility in channel 1 is exactly opposite to that in channel 2. The parameter variation of the back barrier layer can effectively change the scattering characteristics of the main channel. Low‐temperature mobilities of n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN HEMTs under varied doping concentrations are also obtained. Finally, the results are verified by comparison with the technology computer‐aided design simulations for DC HEMTs.

The Robust Ferroelectric and Electrical Response in 2D Bi2O2Se Semiconductor

AbstractThe amelioration of atomically thin ferroelectric materials is imperative for next‐generation outperformed two‐dimensional (2D) electronics, which is elusive by their bulk counterparts. These remarkable materials’ ferroelectric and piezoelectric features are the fundamental urges in optoelectronics, electronics, and energy harvesting. In this work, 2D ferroelectric Bi2O2Se flakes have been synthesized using a modified chemical vapor deposition technique. The 6 nm thick Bi2O2Se flake provides a robust ferroelectric switching under an applied voltage of ±10 V by piezoresponse force microscopy, further confirmed by first principles. Leveraging the successful growth, the high‐quality Bi2O2Se flakes permit the fabrication of a field‐effect transistor (FET) with state‐of‐the‐art performance. The FET device rewards a high current on–off ratio of 108 and field effect mobility of almost 131 cm2 V−1 s−1, owing to the small carrier effective mass of 0.2 m0. Combined, the electric field‐induced local polarization of ferroelectric switching and unprecedented device performance of Bi2O2Se semiconductors are certified for their utilization in advanced nanoelectronics and miniaturization of multifunctional devices with multifunctionalities.

Design of the electron cyclotron emission diagnostic on EXL-50 spherical torus

The electron cyclotron emission (ECE) diagnostic system has been developed on the ENN spherical torus (EXL-50). The ECE system is designed to detect radiation emitted by energetic electrons, rather than conventional 1D electron temperature profile measurement, in the frequency range of 4−40 GHz. The system is composed of five subsystems, each covering a different frequency band, including the C-band (4−8 GHz), X-band (8−12 GHz), Ku-band (12−18 GHz), K-band (18−26.5 GHz) and K -band (26.4−40 GHz). The system uses heterodyne detection to analyze the received signals. The K-band and K -band subsystems are located horizontally in the equatorial plane of the EXL-50, while the C-band, X-band and Ku-band subsystems are located under the vacuum vessel of the EXL-50. To direct the microwaves from the plasma to the antennas for the horizontal detection subsystems, a quasi-optical system has been developed. For the vertical detection subsystems, the antennas are directly attached to the port located beneath the torus at = 700 mm, which is also the magnetic axis of the torus. The system integration, bench testing and initial experimental results will be thoroughly discussed, providing a comprehensive understanding of the ECE system’s performance and capabilities.

Anisotropic Quantum Hall Droplets

We study two-dimensional (2D) droplets of noninteracting electrons in a strong magnetic field, placed in a confining potential with arbitrary shape. Using semiclassical methods adapted to the lowest Landau level, we obtain near-Gaussian energy eigenstates that are localized on level curves of the potential and have a position-dependent height. This one-particle insight allows us to deduce explicit formulas for expectation values of local many-body observables, such as density and current, in the thermodynamic limit. In particular, correlations along the edge are long-ranged and inhomogeneous. As we show, this is consistent with the system’s universal low-energy description as a free 1D chiral conformal field theory of edge modes, known from earlier works in simple geometries. A delicate interplay between radial and angular dependencies of eigenfunctions ultimately ensures that the theory is homogeneous in terms of the canonical angle variable of the potential, despite its apparent inhomogeneity in terms of more naïve angular coordinates. Finally, we propose a scheme to measure the anisotropy by subjecting the droplet to microwave radiation; we compute the corresponding absorption rate and show that it depends on the droplet’s shape and the waves’ polarization. These results, both local and global, are likely to be observable in solid-state systems or quantum simulators of 2D electron gases with a high degree of control on the confining potential. Published by the American Physical Society 2024

Stoner Ferromagnetism in a Momentum-Confined Interacting 2D Electron Gas.

In this work we investigate the ground state of a momentum-confined interacting 2D electron gas, a momentum-space analog of an infinite quantum well. The study is performed by combining analytical results with a numerical exact diagonalization procedure. We find a ferromagnetic ground state near a particular electron density and for a range of effective electron (or hole) masses. We argue that this observation may be relevant to the generalized Stoner ferromagnetism recently observed in multilayer graphene systems. The collective magnon excitations exhibit a linear dispersion, which originates from a diverging spin stiffness.

Phase-engineered synthesis of atomically thin te single crystals with high on-state currents

Multiple structural phases of tellurium (Te) have opened up various opportunities for the development of two-dimensional (2D) electronics and optoelectronics. However, the phase-engineered synthesis of 2D Te at the atomic level remains a substantial challenge. Herein, we design an atomic cluster density and interface-guided multiple control strategy for phase- and thickness-controlled synthesis of α-Te nanosheets and β-Te nanoribbons (from monolayer to tens of μm) on WS2 substrates. As the thickness decreases, the α-Te nanosheets exhibit a transition from metallic to n-type semiconducting properties. On the other hand, the β-Te nanoribbons remain p-type semiconductors with an ON-state current density (ION) up to ~ 1527 μA μm−1 and a mobility as high as ~ 690.7 cm2 V−1 s−1 at room temperature. Both Te phases exhibit good air stability after several months. Furthermore, short-channel (down to 46 nm) β-Te nanoribbon transistors exhibit remarkable electrical properties (ION = ~ 1270 μA μm−1 and ON-state resistance down to 0.63 kΩ μm) at Vds = 1 V.

Synthesis of 2D layered transition metal (Ni, Co) hydroxides via edge-on condensation

Layered transition metal hydroxides (LTMHs) with transition metal centers sandwiched between layers of coordinating hydroxide anions have attracted considerable interest for their potential in developing clean energy sources and storage technologies. However, two-dimensional (2D) LTMHs remain largely understudied in terms of physical properties and applications in electronic devices. Here, for the first time we report > 20 μm α-Ni(OH)2 2D crystals, synthesized from hydrothermal reaction. And an edge-on condensation mechanism assisted with the crystal field geometry is proposed to understand the 2D intra-planar growth of the crystals, which is also testified through series of systematic comparative studies. We also report the successful synthesis of 2D Co(OH)2 crystals (> 40 μm) with more irregular shape due to the slightly distorted octahedral geometry of the crystal field. Moreover, the detailed structural characterization of synthesized α-Ni(OH)2 are performed. The optical band gap energy is extrapolated as 2.54 eV from optical absorption measurements and the electronic bandgap is measured as 2.52 eV from reflected electrons energy loss spectroscopy (REELS). We further demonstrate its potential as a wide bandgap (WBG) semiconductor for high voltage operation in 2D electronics with a high breakdown strength, 4.77 MV/cm with 4.9 nm thickness. The successful realization of the 2D LTMHs opens the door for future exploration of more fundamental physical properties and device applications.

Magnetic Properties of A Cavity‐Embedded Square Lattice of Quantum Dots or Antidots

AbstractQuantum electrodynamical density functional theory is applied to obtain the electronic density, spin polarization, as well as orbital and spin magnetizations of square periodic arrays of quantum dots or antidots subjected to the influence of a far‐infrared cavity photon field. A gradient‐based exchange‐correlation functional adapted to a 2D electron gas in a transverse homogeneous magnetic field is used in the theoretical framework and calculations. The obtained results predict a non‐trivial effect of the cavity field on the electron distribution in the unit cell of the superlattice, as well as on the orbital and spin magnetizations. The number of electrons per unit cell of the superlattice is shown to play a crucial role in the modification of the magnetization via the electron–photon coupling. The calculations show that cavity photons strengthen the diamagnetic effect in the quantum dot structure, while they weaken the paramagnetic effect in the antidot structure. As the number of electrons per unit cell of the lattice increases, the electron–photon interaction reduces the exchange forces that will otherwise promote strong spin splitting for both the dot and the antidot arrays.

Non‐Destructive Tomographic Nanoscale Imaging of Ferroelectric Domain Walls

AbstractExtraordinary physical properties arise at polar interfaces in oxide materials, including the emergence of 2D electron gases, sheet‐superconductivity, and multiferroicity. A special type of polar interface is ferroelectric domain walls, where electronic reconstruction phenomena can be driven by bound charges. Great progress has been achieved in the characterization of such domain walls and, over the last decade, their potential for next‐generation nanotechnology has become clear. Established tomography techniques, however, are either destructive or offer insufficient spatial resolution, creating a pressing demand for 3D imaging compatible with future fabrication processes. Here, non‐destructive tomographic imaging of ferroelectric domain walls is demonstrated using secondary electrons. Utilizing conventional scanning electron microscopy (SEM), the position, orientation, and charge state of hidden domain walls are reconstructed at distances up to several hundreds of nanometers away from the surface. A mathematical model is derived that links the SEM intensity variations at the surface to the local domain wall properties, enabling non‐destructive tomography with good noise tolerance on the timescale of seconds. The SEM‐based approach facilitates high‐throughput screening of materials with functional domain walls and domain‐wall‐based devices, which is essential for monitoring during the production of device architectures and quality control in real‐time.

Tunable 2D Electron- and 2D Hole States Observed at Fe/SrTiO3 Interfaces.

Oxide electronics provide the key concepts and materials for enhancing silicon-based semiconductor technologies with novel functionalities. However, a basic but key property of semiconductor devices still needs to be unveiled in its oxidic counterparts: the ability to set or even switch between two types of carriers-either negatively (n) charged electrons or positively (p) charged holes. Here, direct evidence for individually emerging n- or p-type 2D band dispersions in STO-based heterostructures is provided using resonant photoelectron spectroscopy. The key to tuning the carrier character is the oxidation state of an adjacent Fe-based interface layer: For Fe and FeO, hole bands emerge in the empty bandgap region of STO due to hybridization of Ti- and Fe- derived states across the interface, while for Fe3O4 overlayers, an 2D electron system is formed. Unexpected oxygen vacancy characteristics arise for the hole-type interfaces, which as of yet hadbeen exclusively assigned to the emergence of 2DESs. In general, this finding opens up the possibility to straightforwardly switch the type of conductivity at STO interfaces by the oxidation state of a redox overlayer. This will extend the spectrum of phenomena in oxide electronics, including the realization of combined n/p-type all-oxide transistors or logicgates.

Interactions and ultrafast dynamics of exciton complexes in a monolayer semiconductor with electron gas

Abstract We present femtosecond pump-probe measurements of neutral and charged exciton optical response in monolayer MoSe2 to resonant photoexcitation of a given exciton state in the presence of 2D electron gas. We show that creation of charged exciton (X−) population in a given K+, K− valley requires the capture of available free carriers in the opposite valley and reduces the interaction of neutral exciton (X) with the electron Fermi sea. We also observe spectral broadening of the X transition line with the increasing X− population caused by efficient scattering and excitation induced dephasing. From the valley-resolved analysis of the observed effects we are able to extract the spin-valley relaxation times of free carriers as a function of carrier density. Moreover, we analyze the oscillator strength and energy shift of X in the regime of interaction with electron Fermi sea under resonant excitation. From this we can observe the process of X decay by radiative recombination paired with trion formation. We demonstrate an increase of neutral exciton relaxation rate with the introduction of Fermi sea of electrons. We ascribe the observed effect to the increased efficiency of the trion formation, as well as the radiative decay caused by the screening of disorder by the free carriers.

DeepFocus: fast focus and astigmatism correction for electron microscopy

High-throughput 2D and 3D scanning electron microscopy, which relies on automation and dependable control algorithms, requires high image quality with minimal human intervention. Classical focus and astigmatism correction algorithms attempt to explicitly model image formation and subsequently aberration correction. Such models often require parameter adjustments by experts when deployed to new microscopes, challenging samples, or imaging conditions to prevent unstable convergence, making them hard to use in practice or unreliable. Here, we introduce DeepFocus, a purely data-driven method for aberration correction in scanning electron microscopy. DeepFocus works under very low signal-to-noise ratio conditions, reduces processing times by more than an order of magnitude compared to the state-of-the-art method, rapidly converges within a large aberration range, and is easily recalibrated to different microscopes or challenging samples.

Quantized conductance in hybrid split-gate arrays of superconducting quantum point contacts with semiconducting two-dimensional electron systems

A quantum point contact (QPC)—a constriction in a semiconducting two-dimensional electron system with a quantized conductance—is a building block of novel spintronic and topological electronic circuits. QPCs can also be used as readout electronics, charge sensors, or switches in quantum nanocircuits. A short and impurity-free constriction with superconducting contacts is a Cooper-pair QPC analogue known as a superconducting quantum point contact (SQPC). The technological development of such quantum devices has been prolonged due to the challenges of maintaining their geometrical requirement and near-unity superconductor-semiconductor interface transparency. Here, we develop advanced nanofabrication, material and device engineering techniques and report on an innovative realization of nanoscale hybrid SQPC arrays with split gate technology in semiconducting 2D electron systems. We exploit the special gate tunability of the quantum wells, and demonstrate the first experimental observation of conductance quantization in hybrid InGaAs-Nb SQPCs. We observe reproducible quantized conductance at zero magnetic fields in multiple quantum nanodevices fabricated in a single chip and systematically investigate the quantum transport of SQPCs at low and high magnetic fields for their potential applications in quantum metrology, for extremely accurate voltage standards, and fault-tolerant quantum technologies. Published by the American Physical Society 2024

Optical conductivity and damping of plasmons due to electron-electron interaction

We revisit the issue of plasmon damping due to electron-electron interaction. The plasmon linewidth can be related to the imaginary part of the charge susceptibility or, equivalently, to the real part of the optical conductivity, Reσ(q,ω). Approaching the problem first via a standard semiclassical Boltzmann equation, we show that Reσ(q,ω) of a two-dimensional (2D) electron gas scales as q2T2/ω4 for ω≪T, which agrees with the results of Principi [] and Sharma [] but disagrees with that of Mishchenko [], according to which Reσ(q,ω)∝q2T2/ω2. To resolve this disagreement, we rederive Reσ(q,ω) using the original method of Mishchenko for an arbitrary ratio ω/T and show that while the last term is, indeed, present, it is subleading to the q2T2/ω4 term. We give a physical interpretation of both leading and subleading contributions in terms of the shear and bulk viscosities of an electron liquid, respectively. We also calculate Reσ(q,ω) for a three-dimensional electron gas and doped monolayer graphene. We find that, all other parameters being equal, finite temperature has the strongest effect on the plasmon linewidth in graphene, where it scales as T4lnT for ω≪T. Published by the American Physical Society 2024

Strain-induced enhancement of 2D electron gas density in AlGaN/GaN heterojunction: a first-principles study

In this study, we investigated the impact of strain on the electronic structure and polarization of Al x Ga1−x N and AlGaN/GaN heterojunctions using first-principles density functional theory. Our findings reveal that, in the absence of strain, the band gap and electron effective mass of Al x Ga1−x N increase with higher Al composition. Similarly, the spontaneous and piezoelectric polarization also increase accordingly. Moreover, under biaxial 5% tensile strain and 5% compressive strain, the two-dimensional (2D) electron gas surface density in the AlGaN/GaN heterojunction reaches 8.12 × 1012 cm−2 and 2.50 × 1012 cm−2, respectively. Comparatively, the surface density without strain is 5.62 × 1012 cm−2. Tensile strain significantly enhances the 2D electron gas surface density, which holds potential theoretical value for improving the electrical performance of AlGaN/GaN high electron mobility transistors.

Optoelectronic Synapse Based on 2D Electron Gas in Stoichiometry-Controlled Oxide Heterostructures.

Emulating synaptic functionalities in optoelectronic devices is significant in developing artificial visual-perception systems and neuromorphic photonic computing. Persistent photoconductivity (PPC) in metal oxides provides a facile way to realize the optoelectronic synaptic devices, but the PPC performance is often limited due to the oxygen vacancy defects that release excess conduction electrons without external stimuli. Herein, a high-performance optoelectronic synapse based on the stoichiometry-controlled LaAlO3/SrTiO3 (LAO/STO) heterostructure is developed. By increasing La/Al ratio up to 1.057:1, the PPC is effectively enhanced but suppressed the background conductivity at the LAO/STO interface, achieving strong synaptic behaviors. The spectral noise analyses reveal that the synaptic behaviors are attributed to the cation-related point defects and their charge compensation mechanism near the LAO/STO interface. The short-term and long-term plasticity is demonstrated, including the paired-pulse facilitation, in the La-rich LAO/STO device upon exposure to UV light pulses. As proof of concepts, two essential synaptic functionalities, the pulse-number-dependent plasticity and the self-noise cancellation, are emulated using the 5×5 array of La-rich LAO/STO synapses. Beyond the typical oxygen deficiency control, the results show how harnessing the cation stoichiometry can be used to design oxide heterostructures for advanced optoelectronic synapses and neuromorphic applications.