Abstract
High-performance piezotronic semiconductor devices have been proven to apply in signal detection, energy converter, and other important fields. Avalanche breakdown is a classical current amplification mechanism. Combining the piezotronic polarization charges regulation of the avalanche process, we novelty proposed a piezotronic PIN diode based on ZnO and used the FEM to calculate the characteristic of the device. The gauge factor can reach 106. This study can guide the design of ultrahigh sensitivity piezotronic photodetectors.
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