Abstract

Piezotronic and piezophototronic sensors have potential application to biological detection and human-computer interaction due to converting mechanical signals into electrical signals. Strain-induced polarization can manipulate avalanche multiplication process in the junction of the piezotronic and piezophototronic avalanche diode and field effect transistor. The gauge factor of piezotronic and piezophototronic avalanche devices can reach 106-107. The ultrafast piezotronic and piezophototronic avalanche devices can be developed because the response time can be reduced by strain-induced polarization. This study can provide guidance for ultrafast and ultrahigh sensitivity piezotronic and piezophototronic strain sensors and photodetectors.

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