Abstract
Free exciton recombination without phonon assistance is confirmed by detailed observation of photoluminescence from Al x Ga 1− x P liquid-phase epitaxial layers fabricated by temperature difference method under controlled vapor pressure (TDM-CVP). Such zero-phonon free exciton recombination luminescence is detected at the center between two lines of free exciton recombination with phonon emission and absorption. The luminescence peak is in a shape of a Maxwell–Boltzmann function, which free exciton energy distribution follows, and the peak intensity increases with excitation power approximately linearly. It is considered that free exciton recombination without phonon assistance is intensified by some local perturbations to electrical potentials against carriers or excitons introduced by Al atoms in Al x Ga 1− x P layers which can provide momentum change necessary for free exciton recombination.
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