Abstract
In 1− x Ga x P single bulk crystal with a size of 4×(4–5)×5 mm 2 have been reproducibly grown by the temperature difference method under controlled vapor pressure (TDM-CVP) [1–3]. For the first time, homogeneous In 1− x Ga x P epitaxial layers have been gro wn on In 1− x Ga x P substrate by TDM-CVP. The X-ray reflection topograph of an In 0.23Ga 0.77P epitaxial layer grown on an In 0.24Ga 0.76P substrate indicates that the cross-hatch patterns due to lattice misfit dislocations between the epitaxial layer and substrate have not been observed.
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