Abstract
Temperature difference method under controlled vapor pressure (TDM-CVP) liquid phase epitaxy has been applied to the growth of PbTe using Pb solvent and with applied Te vapor pressure. Epitaxial layers with a good morphology were obtained with a growth temperature ( T g) ranging from 410 to 700°C. Growth thickness as a function of growth time, subsidiary heater power, and growth temperature are measured and analyzed. All the unintentionally doped epitaxial layers are n-type. The carrier concentrations of the epitaxial layers become minimum at a Te pressure of 4 × 10 −4−5 × 10 −4 Torr for T g = 560°C and 0.9 × 10 −3−1 × 10 −3 Torr for T g = 600°C.
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