Abstract
Multilayer growth of Al x Ga 1− x P and GaP on a GaP substratewith narrow buried stripe structures has been successfully performed by the temperature difference method under controlled vapor pressure (TDM-CVP). We have observed cross-hatch patterns and strain-induced optical anisotropy, although the lattice misfitting is as small as that of the Al x Ga 1- x As-GaAs system. Also we have measured the optical transmission of the GaP waveguiding stripes and confirmed sufficient transparency and optical confinement.
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