Abstract
Owing to the ideal optical cavity structure, the microsphere has always played a significant role in micro/nano optoelectronic devices for its high light-confined ability and large surface-volume ratio, which have been applied in lots of areas including intracellular lasers, tunable lasers, and so on. Furthermore, the microsphere cavity will be a useful and efficient means to improve the photodetector (PD) performance by enhancing the light absorption efficiency and light energy in the arrays. Herein, the wide-bandgap semiconductor microspheres are introduced in the PD, which are synthesized by a simple and universal hydrothermal method. The sensitive ultraviolet PD is constructed and obtained with a metal-semiconductor-metal type device structure. The oxide defect concentration in the ZnO microspheres is modulated through thermal treatment to improve the performance, including higher photo-to-dark current ratio near 600, responsivity of 7.6✕10−5 A/W, detectivity of 4.6✕107 Jones, and response speed. Moreover, the microspheres fabricated flexible device presents great detecting performance with different bending degrees. The results display the excellent prospect of semiconductor microspheres to flexible ultraviolet high-performance PDs, which possess the broad and potential development prospect in flexible even on-chip optoelectronic devices.
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