Abstract
ABSTRACT Sensitive ultraviolet photodetect ors are essential components for a growing nu mber of civilian and military applications. In this paper, we report 4H Silicon Carbide (SiC) avalanche photodiodes (APDs) with a p-i-n structure. These APDs, range in diameter from 180 µm to 250µm, exhibit very low dark current (10s of pA at avalanche gain of 1000) and high gain in linear-mode operation. An external quantum efficiency of 48% at 280 nm is achieved at unity gain with a recessed-window structure. The differentia l resistance of a 250 µm recessed-window device at zero bias is estimated to be 6 10 14 ohms. As a result of high external quantum efficiency , large area, and large differential resistance, a record high specific detectivity of 4.1 10 14 cmHz 1/2 W -1 , has been achieved. Single ultraviolet photon detection in Geiger-mode operation with gated quenching is also described. In this pape r, we report single photon detection efficiency (SPDE) of 30% at 280 nm with a dark count probability (DCP) of 8 10
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