Abstract
An In Ga As-InP avalanche photodiode with very low dark current (0.15 pA at 95% breakdown voltage, 200 K) has been characterized in gated mode for single-photon detection. The temperature dependence of dark current and dark count yields activation energy of 0.4 eV from 240 K to 297 K. High single-photon detection efficiency (SPDE) at telecom wavelengths with very low dark count rate (DCR) (e.g., DCR kHz at SPDE at 1.31 m and 200 K) was achieved. Index Terms—Avalanche photodiodes (APDs), dark count rate (DCR), single-photon avalanche photodiodes, single-photon detection efficiency (SPDE).
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