Abstract
Detection of low-level ultraviolet (UV) light has been the focus of numerous research and development efforts in recent years. To date, the most promising solid-state solution is SiC avalanche photodiodes. We report 4H-SiC avalanche photodiodes with low dark current and high gain. Geiger mode operation with high single photon detection efficiency and low dark count probability has been achieved. The dark current behavior of a 4x4 array of SiC APDs is also presented.
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