Novel ultraviolet photodetector with ultrahigh photosensitivity employing SILAR-deposited ZnS film on MgZnO

Abstract

Abstract A novel MgZnO/ZnS heterojunction-based ultraviolet (UV) photodetector (PD) with high performance is fabricated by a facile sol-gel process and a successive ionic layer adsorption and reaction (SILAR) method. ZnS is coated onto the MgZnO film as an interface modification layer, which overcomes the drawbacks of the pristine MgZnO photosensitive layer, such as lower carrier mobility and more traps in the material, and greatly enhances UV-light absorption. The type-II heterostructure constructed by work function differences near the interface facilitate the separation of photogenerated carriers. Compared with the MgZnO PD, the optimized heterojunction PD (MgZnO/ZnS-10) yields a dramatically decreased dark current (≈1 nA), a remarkable responsivity (900 A/W) and an ultrahigh photo-to-dark current ratio (up to 2.3 × 105) under 325 nm light illumination at 5 V bias. These results provide a cost-efficient means for improving the properties of MgZnO PDs, and show the advantages of MgZnO/ZnS heterojunction PDs in UV detection. This study demonstrates that rational construction of novel heterojunctions holds great potential for fabricating high-performance photodetectors.