Abstract
The design and fabrication of X-band MMIC low-noise amplifier (LNA) based on 0.15 μm GaAs pHEMT technology is presented. The design and fabrication of X-band MMIC LNA is presented. MMIC is implemented with 0.15 mum pHEMT GaAs technology developed in the Institute of Microwave Semiconductor Electronics (Russia). Two-stage LNA is designed with using visual design CAD tools. In 7-10 GHz, it provides power gain G = 15.5 -17 dB, noise figure from 2.1 to 2.9 dB, input and output return losses from -8 to -12 dB, and linear output power of +6 dBm.
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