Abstract
Structural study of CdSe/BeTe superlattices (SLs) grown by molecular beam epitaxy on GaAs substrate was performed by using double and triple crystal x-ray diffractometry. The period of the studied structures was about 5 nm, while the thickness of thin CdSe insertions varied from 0.4 to 1.5 monolayer. It is shown that new Be–Se bonds arise at the BeTe–CdSe interfaces in addition to the Be–Se bonds expected at the CdSe–BeTe interfaces. From the analysis of the diffraction curves of 002-reflection the complex composition of interfaces and thin insertions has been determined and contribution of all types of bonds in each SL period calculated. The diffraction curves of 004-reflection were used for the specification of the fine structure of the interfaces.
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