Abstract
A method for structure perfection diagnostics of slightly distorted crystals under X-ray diffraction in Bragg geometry is considered. The approach is based on measurement of total integral intensity of separate coherent and diffuse components of a reflected beam by triple-crystal diffractometry in (n, -n, n) geometry. This allows to calculate the value of the static Debye-Waller factor and of coefficients of additional radiation energy losses under coherent and diffuse scattering on the defects. We studied symmetric reflections from (111) and (400) planes of silicon for CuK α1 and MoK α1 radiation. The obtained values of the static Debye-Waller factor for crystals under study are compared with calculated ones obtained from Dederichs approximate model.
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