Abstract
Thin layers of InN are grown by molecular beam epitaxy on (0001) sapphire substrates. The influence of thin (15 nm) InN buffer layers and their temperature treatment on the structural quality of the grown layers is investigated by double-crystal and triple-crystal x-ray diffractometry. It is revealed that the preliminary high-temperature (900°C) annealing of the buffer layer leads to a notable improvement in the quality of the layers grown on this buffer. The densities of vertical screw and vertical edge dislocations decrease (to 1.9×108 cm−2 and 1.3×1011 cm−2, respectively) with an increase in the distance from the interface (by ∼1 µm).
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