Abstract
The structural perfection of GaAs epitaxial films grown by molecular beam epitaxy on substrates with the (100), (111)A, and (111)B orientations is investigated by double-crystal and triple-crystal x-ray diffractometry. It is found that the ratio γ of the molecular fluxes of arsenic and gallium has a strong influence on the structural quality of the epitaxial films. The optimum values of the parameter γ are found for each of the substrate orientations (100), (111)A, and (111)B.
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