Abstract
The authors present the first YBa2Cu3O7-x-Pb tunnelling measurements using window-type tunnel devices. YBa2Cu3O7-x (YBCO) thin films are grown in-situ by dual Ar+ ion beam sputtering. Tunnel barriers are formed on a chemically etched YBCO surface. Tunnelling dV/dI(V) characteristics show reproducible weak gap-like structure 4.4+or-0.4 meV and 22+or-2 meV, the latter giving a 2 Delta /kBTc value of about 6.5.
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