Abstract
We have prepared YBa2Cu3O7-x (YBCO) thin films with amorphous YSZ buffer layers by a pulsed laser deposition (PLD) method. We have investigated the growth mechanism of YBCO films and the buffer layers deposited at room temperature on MgO(l00) substrate and Hastelloy C-276 substrate. It was found that the YSZ film deposited at room temperature showed a weak (200) peak after post-annealing at 750°C. YBCO thin films with YSZ buffer layer on the MgO substrate showed (103) orientation at 650°C and showed c-axis orientation at the deposition temperature higher than 700°C. In these samples, the crystallinity was improved and critical temperature of YBCO thin films increased as the substrate temperature increased. On the other hand, the crystallinity of YSZ buffer layers did not depend on the deposition temperature of YBCO thin films. YBCO thin films deposited on the Hastelloy substrates with YSZ buffer layers showed c-axis orientation at the deposition temperature lower than 750°C, but didn’t show c-axis orientation at 850°C.
Published Version
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