Abstract
The present paper is aimed to report the analytical study of wave interaction in two species (InSb, GaAs) ion implanted semiconductor plasma. Considering that the third order optical susceptibility χᶟ arising from the nonlinear wave interaction and using couple mode theory an analytical investigation of two species with ion-implantation has been presented. We have studied the threshold (E0th) and gain characteristics (α) with number density (n0) and wave vector (k) respectively. It can be seen that, in the case of GaAs shows a favourable enhancement in steady-state as well as the gain coefficient of the generated acoustic mode.
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