VDMOSFET model parameter extraction based on electrical and optical measurements

Abstract

Lateral device parameters for VDMOSFET (Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor) with hexagonal cells are extracted using an original method based on electrical and optical measurements. Using microscopic observation of the ship of the device and C–V characterization, the lateral device structure parameters could be extracted. Values of the extracted parameters are in good agreement with the values given by the manufacturer. The advantage of this method is the high precision of results for a low cost. Perhaps the most important point of this method is that it can replace the other techniques usually employed, wherein devices are destroyed to obtain the cross section of the structure. The proposed technique can be very useful for analyzing any complex geometrical structure of VDMOS transistors (hexagonal, triangular, square etc…).