Abstract
Lateral Device parameters for VDMOSFET (Vertical double diffused metal oxide semiconductor field effect transistor) with hexagonal cells has been extracted by an original model based on electrical and optical measurements. Using microscopic observation for the ship of the device and by C-V characterization, the lateral device structure parameters could be extracted. Values of the extracted parameters are in good correlation with the values given by the manufactured. Advantage of this model the high precision results with a low cost. Perhaps, the most important point in this model, that we can replace the other techniques usually employed in this study where we destroyed the device for cut and cross section of the structure. The proposed technique in this paper can be very useful for analyzing any complex geometrical structure of VDMOS transistors (hexagonal, triangular, square <em>etc</em>...).
Highlights
The n-channel MOSFETs are the most popular for use in power switching circuits and applications
Various manufacturers produce power MOSFETs under the names HEXFET (International rectifier), VMOS (Phillips), SIPMOS (Siemens) and all consist of various physical designs diffused into an epitaxial substrate in multiple parallel
Technical progress of microelectronic integration involve an evolution towards the miniaturization which requires new structural modifications to answer the sub-micronics parasitic effects [8-111. Lateral parameters of these devices are needed for software simulation models for the components structure
Summary
Radiation Technology, lnterfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands (Received 22 August 2000; In finalform 13 September 2000). Lateral Device parameters for VDMOSFET (Vertical double diffused metal oxide ’miconductor field effect transistor) with hexagonal cells has been extracted by an original model based on electrical and optical measurements. Using microscopic observation for the ship of the device and by C-V characterization, the lateral device structure parameters could be extracted. Values of the extracted parameters are in good correlation with the values given by the manufactured. Advantage of this model the high precision results with a low cost. The proposed technique in this paper can be very useful for analyzing any complex geometrical structure of VDMOS transistors (hexagonal, triangular, square etc...)
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