Abstract
Field-effect transistor (FET) devices with thin films of perylene have been fabricated with various metal electrodes exhibiting work function ϕ from 2.5to5.1eV. All perylene FET devices show p-channel FET properties. The p-channel field-effect mobility μp and the on-off ratio in the perylene FET increase with an increase in ϕ of the metal electrodes. The n-channel conduction is also observed for the FET devices with Eu and Sr electrodes exhibiting small ϕ. These results can be reasonably explained on the basis of energy barrier for hole or electron.
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