Field-effect transistors with thin films of perylene on SiO2 and polyimide gate insulators

Abstract

Field-effect transistor (FET) devices have been fabricated with thin films of perylene on SiO2 and polyimide gate insulators, and p-channel FET properties have been found in both FET devices. The perylene FET devices with SiO2 and polyimide gate insulators exhibited field-effect mobility, μ, values of 7.0×10−3 and 3.7×10−4cm2V−1s−1, respectively, at 300K under vacuum of 10−6Torr. These FET devices were found to operate under atmospheric condition after exposure to air. The μ value increased with increasing temperature from 160to280K, showing a hopping carrier transport.