Abstract
We propose a set of boundary conditions for electron envelope functions at GaAs/AlAs (001) heterointerfaces so as to take into account Γ- X mixing in the effective mass method. The proposed conditions enable one to obtain the dependence of the mixing effect upon the parity of monomolecular layer numbers in (GaAs) N (AlAs) M superlattices. The electron transmission spectra of GaAs(AlAs) M GaAs single barrier structures are calculated in the generalized effective-mass approximation. It is shown that the spectral fine structure depends essentially upon the parity of M. The low-temperature d.c. current-voltage characteristics of the single-barrier structure is derived taking into account the camel-back X-band structure in bulk AlAs and GaAs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
