Abstract
We have grown high purity, high quality, epitaxial GaAs layers using a new gallium precursor, dimethylamine gallane. DMA-Ga is an organometallic source of gallium which can be used by low pressure epitaxial reactors. This molecule does not contain gallium-carbon bonds and therefore, GaAs layers with low carbon backgrounds can be grown. Using DMA-Ga, we have grown n-type GaAs layers with background donor concentrations of 5x10 14 cm -3, room temperature mobilities of 7840 cm 2/V·s, and liquid nitrogen mobilities of 60,000 cm 2/V·s. Photoluminiscence spectra at 4.2 K show strong narrow exciton peaks. We compare these results with those obtained using other gallium sources, namely, triethylgallium and trisobultylgallium. We believe that this compound will promote the use of high vacuum epitaxy reactors (VCE, MOMBE, and CBE) as production tools for the preparation of high performance compound semiconductor devices.
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