Abstract
High quality, epitaxial undoped, Zn- and Se-doped GaAs films have been grown by metal organic chemical vapor deposition (MOCVD) on flexible metal substrates using buffered Ge epitaxial templates. The GaAs films exhibit strong (400) orientation, sharp in-plane texture, strong photoluminescence and a defect density of ∼107 cm−2. Furthermore, the GaAs films exhibit hole and electron mobilities as high as 106 and 872 cm2/V-s respectively. Also, roll-to-roll MOCVD growth of epitaxial GaAs films has been demonstrated for the first time on flexible metal substrates. These high mobility single-crystallinelike GaAs thin films on inexpensive flexible metal substrates are being developed for high efficiency, low cost thin film III–V solar photovoltaics (PV).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
